Microstructure and electrical properties of nitrogen doped 3C–SiC thin films deposited using methyltrichlorosilane

In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition

“…The slight decrease in activation energy with increasing φ N2 has been reported in several studies [5,13,39], and is generally attributed to the decrease in average potential energy of an electron [40]. Figure 8 compares the electrical conductivity and deposition rate of the N-doped 3C-SiC samples prepared in this study with those reported in the literature [5,[10][11][12][13][14]41]. Since most previous studies only provide approximate deposition rates, we assume that they involve a constant deposition rate.…”

“…The σ values of all 3C-SiC bulks increased with increasing temperature in the range of 295 to 775 K. The activation energy of σ was 0.08 eV for the undoped 3C-SiC and decreased to 0.03 eV at φ N2 = 30%, indicating the presence of a shallow donor level below the conduction band (with energy E N = 0.03-0.08 eV) in the 3C-SiC bulks [38]. The slight decrease in activation energy with increasing φ N2 has been reported in several studies [5,13,39], and is generally attributed to the decrease in average potential energy of an electron [40]. Figure 8 compares the electrical conductivity and deposition rate of the N-doped 3C-SiC samples prepared in this study with those reported in the literature [5,[10][11][12][13][14]41].…”

“…Silicon carbide (SiC) is a promising electronic material, which has been applied in various fields due to its excellent mechanical properties, chemical stability, and high durability [1,2]. Although SiC is an intrinsic semiconductor, a high electrical conductivity (σ) is a necessary requirement for certain applications, such as solar cells [3], electromagnetic shielding materials [4], pressure sensors [5], and electro-discharge machining [6]. In situ doping via chemical vapour deposition (CVD) is a common method to improve the electrical conductivity of intrinsic semiconductors and allow its application in various fields, such as diamond, ZnO, TiO 2 , etc.…”

“…[7][8][9]. In recent decades, a great deal of work has been focused on the preparation of N-doped SiC by adding NH 3 [5,10] or N 2 [11,12] during CVD, achieving σ values from 0.1 to 10 3 S/m. However, the deposition rates (R dep ) were limited to values between 0.1 and 10 µm/h [10][11][12][13][14].…”

SIMS and auger investigation of thin a-SiC and a-SiC:H films by Up-Down sputtering DC magnetron, impact on optical properties

“…Its presence is indeed residual, as we see the decrease of its signal during depth profiling. Highlight is the presence of nitrogen (N 2 ) -whose direct effects on the optical gap are well known [12] in the two kind layers; however, more pronounced for a-SiC layers (Fig. 3a) than for a-SiC:H layers (Fig.…”