2019
DOI: 10.1016/j.rinp.2019.02.015
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Microstructure and electrical properties of silica-Zn2SiO4-Mn glass-ceramics as composite for optoelectronic devices

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Cited by 21 publications
(7 citation statements)
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“…At low frequencies, the magnitude of Z ′ increases with the temperature at range from 353 K to 373 K. Then it is observed that beyond 373 K, the value of Z ′ decreases on increasing temperature, which can be explained by the reduction of trapped charge density and a thermal activation of their mobility. 25 Besides, the values of Z ′ merge at high frequencies (>10 4 Hz). This can be understood by the fact that charge carriers acquired sufficient energy to overcome the potential barrier.…”
Section: Resultsmentioning
confidence: 97%
“…At low frequencies, the magnitude of Z ′ increases with the temperature at range from 353 K to 373 K. Then it is observed that beyond 373 K, the value of Z ′ decreases on increasing temperature, which can be explained by the reduction of trapped charge density and a thermal activation of their mobility. 25 Besides, the values of Z ′ merge at high frequencies (>10 4 Hz). This can be understood by the fact that charge carriers acquired sufficient energy to overcome the potential barrier.…”
Section: Resultsmentioning
confidence: 97%
“…At low frequencies, Z ′ is independent of temperature until 394 K. Then it is observed that beyond 394 K, the value of Z ′ decreases on increasing temperature, which can be explained by the reduction of trapped charge density and a thermal activation of their mobility. 33 As frequency increases, the real impedance Z ′ increases until a specific frequency for each temperature. Besides, the values of Z′ merge at high frequencies (>10 4 Hz).…”
Section: Resultsmentioning
confidence: 99%
“…prepared Mn 2+ ‐activated GeO 2 ‐B 2 O 3 ‐ZnO GCs by infrared femtosecond laser pulses and investigated the long‐lasting phosphorescence properties for different Mn 2+ concentrations from 0 to 1.5 mol%. Mir et al 11 . proposed a sol‐gel route to prepare silica‐Zn 2 SiO 4 ‐Mn GCs and developed a potential application in optoelectronic devices due to their good electrical conductivity.…”
Section: Introductionmentioning
confidence: 99%
“…Qiu et al 10 prepared Mn 2+ -activated GeO 2 -B 2 O 3 -ZnO GCs by infrared femtosecond laser pulses and investigated the long-lasting phosphorescence properties for different Mn 2+ concentrations from 0 to 1.5 mol%. Mir et al 11 proposed a sol-gel route to prepare silica-Zn 2 SiO 4 -Mn GCs and developed a potential application in optoelectronic devices due to their good electrical conductivity. Though the Mn 2+ ions were stabilized at lower redox states with high dopant concentrations, the strong mechanical properties of GCs were sacrificed in these newly preparation methods.…”
Section: Introductionmentioning
confidence: 99%