Microstructure evolution of electroplated Cu during room temperature transient

Gribelyuk, M.; Malhotra, S. G.; Locke, P. S.; DeHaven, Patrick W.; Fluegel, J.; Parks, C.; Simon, A.; Murphy, R. J.

doi:10.1109/iitc.2000.854321

Cited by 3 publications

(3 citation statements)

References 2 publications

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“…6,7 For thick blanket film, it is found that the self-anneal time is a reliable predictor of the incorporation rate of slow diffusing elements such as sulfur and chlorine ͑nonsoluble elements such as carbon have less influence as they desorb easily during recrystallization͒. 3,8 There is ample data on impurity levels in blanket films, but it has seldom been reported on narrow lines so far. In fact, knowledge of impurity incorporation obtained from electroplated copper film cannot be directly transferred to narrow lines.…”

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Geometry Effect on Impurity Incorporation and Grain Growth in Narrow Copper Lines

Zhang

Brongersma

Heylen

et al. 2005

J. Electrochem. Soc.

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Knowledge of the geometry effect on impurity incorporation and grain growth in narrow lines is important for reducing copper line resistivity. In this paper, we investigate impurity incorporation in narrow lines with time-of-flight secondary ion mass spectroscopy. We also study the influence of linewidth, trench depth, pattern density, and overburden on copper grain growth in reduced dimensions. The concentration of chlorine and carbon is found to increase with decreasing linewidth, while the concentration of sulfur is close to the detection limit. This effect contributes to copper superfilling and is consistent with the curvatureenhanced accelerator coverage model. Copper self-anneal slows down as linewidth decreases, although an opposite trend is observed for lines below a width of about 300 nm. Impurity incorporation and geometric constraint retard copper grain growth in narrow lines, resulting in an inverse relationship between copper line resistivity and geometry. However, copper overburden, which has a much larger grain size, can enhance grain growth in narrow lines depending on the line geometry. Reducing impurities and balancing trench depth and copper overburden can be used to reduce the resistivity of narrow copper lines.

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confidence: 99%

Geometry Effect on Impurity Incorporation and Grain Growth in Narrow Copper Lines

Zhang

Brongersma

Heylen

et al. 2005

J. Electrochem. Soc.

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“…[23][24][25] The impurity incorporation with the plating chemistry used in this study was studied previously using pure Cu seed and less than 10 ppm C, O, Cl and S was observed. 21 SIMS analysis confirms the same impurity incorporation in the Cu films plated on CuCo alloy seed layers in this study (not shown).…”

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confidence: 99%

Enhanced Grain Growth of Electroplated Copper on Cobalt-Containing Seed Layer

Huang

Baker-O'Neal

Cabral

et al. 2013

J. Electrochem. Soc.

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Cu films with low impurities were electroplated on pure Cu, CuCo alloy and electrodeposited Co seed layers to study the room temperature grain growth behavior. As-evaporated Cu and CuCo alloy seed layers showed a significant enhancement effect on the Cu recrystallization compared with sputtered Cu seed layers and post-annealed evaporated seed layers. The impact of the electrodeposited Co seed layer on the Cu grain growth was found to be dependent on the Co plating chemistry and on the thickness of the Co film. Co films plated in the absence and presence of saccharin showed a crystal structure of fcc and hcp, respectively. While the former showed little to no impact on the Cu recrystallization, the later was found to enhance or hinder the Cu recrystallization depending on the thickness of the Co. Studies on a Cu/Co sandwich stack structure showed that the recrystallization started at the top Cu layer, proceeding to the middle layer and then to the bottom layer.

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“…Electroplated Cu undergoes recrystallization and exhibits unstable resistivity in storage even at room temperature, which is known as a self-annealing phenomenon. 2,3) A postannealing process immediately after electroplating has been applied to avoid the self-annealing phenomenon, and this process is considered to be crucial to building a reliable and low-resistivity Cu interconnect.…”

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confidence: 99%

In situ Observation of Grain Growth on Electroplated Cu Film by Electron Backscatter Diffraction

Nemoto

Fukino

Tsurekawa

et al. 2009

jjap

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In situ observations using an automated electron backscatter diffraction (EBSD) system with a heating stage were carried out to clarify the mechanism of grain growth on electroplated Cu and Cu deposited by physical vapor deposition (PVD). Hardness measurements and EBSD observations revealed that the strain in electroplated Cu and Cu deposited by PVD was released by annealing. Little preferential orientation of the texture was observed in electroplated Cu, while Cu deposited by PVD showed strong (111) texture. A greater number of twin boundaries were observed in electroplated Cu than in Cu deposited by PVD. Grains surrounded by random grain boundaries were more enlarged by annealing in electroplated Cu than those in Cu deposited by PVD. Since segregation of impurities with a low melting point, such as sulfur, to grain boundaries could promote grain growth, which is often accompanied by twin boundary formation, the reason that many twin boundaries are found in electroplated Cu is considered to be the existence of impurities such as sulfur at grain boundaries. The effect of a twin grain boundary on resistivity was calculated and the contribution of a twin grain boundary to resistivity was found to be much less than that of a random grain boundary. #

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Microstructure evolution of electroplated Cu during room temperature transient

Cited by 3 publications

References 2 publications

Geometry Effect on Impurity Incorporation and Grain Growth in Narrow Copper Lines

Geometry Effect on Impurity Incorporation and Grain Growth in Narrow Copper Lines

Enhanced Grain Growth of Electroplated Copper on Cobalt-Containing Seed Layer

In situ Observation of Grain Growth on Electroplated Cu Film by Electron Backscatter Diffraction

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