“…The ion implantation energy was set at 400 keV with the sample normal direction, which would result in a projected range of 1330 nm that was calculated by SRIM code. [33,34] The SRIM code was also used to simulate the He irradiation induced damage and He concentrations in the Ti 3 SiC 2 matrix and the used displacement energies were 25 eV, 25 eV, and 28 eV for Ti, Si, and C, [12,35] respectively. The helium fluence was in a range from 0.5 × 10 17 He + /cm 2 to 2.0 × 10 17 He + /cm 2 , and the helium flux was set at 0.78 × 10 14 He + /(cm 2 •s) to avoid the severe irradiation heating.…”