Microstructure of PAMBE-grown InN layers on Si(111)

Walther, Roman; Litvinov, D.; Fotouhi, Mohammad; Schneider, Reinhard; Gerthsen, D.; Vöhringer, R.; Hu, Dingyu; Schaadt, D. M.

doi:10.1016/j.jcrysgro.2011.11.068

Cited by 7 publications

(2 citation statements)

References 32 publications

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“…It is known that usually the insertion of an AlN buffer layer leads to an improvement of the subsequent III-nitride crystalline quality, which is valid also for RF reactive sputtering technique [18][19][20][21]. It has also been reported that biasing the substrate can lead to an improvement of the structural quality of RF-sputtered AlN through an increase in the kinetic energy of the impinging ions [22].…”

Section: Introductionmentioning

confidence: 90%

Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer

Monteagudo-Lerma

Valdueza-Felip

Núñez-Cascajero

et al. 2016

Journal of Crystal Growth

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a b s t r a c tWe present the structural and optical properties of (0001)-oriented nanocolumnar films of InN deposited on c-sapphire substrates by radio-frequency reactive sputtering. It is observed that the column density and dimensions are highly dependent on the growth parameters of the buffer layer. We investigate four buffer layers consisting of (i) 30 nm of low-growth-rate InN, (ii) 30 nm of AlN deposited on the unbiased substrate (us), (iii) 30 nm of AlN deposited on the reverse-biased substrate (bs), and (iv) a 60-nm-thick bilayer consisting of 30-nm-thick bs-AlN deposited on top of 30-nm-thick us-AlN. Differences in the layer nucleation process due to the buffer layer induce variations of the column density in the range of (2.5-16) Â 10 9 cm À 2 , and of the column diameter in the range of 87-176 nm. Best results in terms of mosaicity are obtained using the bs-AlN buffer layer, which leads to a full width at half-maximum of the InN(0002) rocking curve of 1.2°. A residual compressive strain is still present in the nanocolumns. All samples exhibit room temperature photoluminescence emission at $ 1.6 eV, and an apparent optical band gap at $ 1.7 eV estimated from linear optical transmittance measurements.

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Section: Introductionmentioning

confidence: 90%

Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer

Monteagudo-Lerma

Valdueza-Felip

Núñez-Cascajero

et al. 2016

Journal of Crystal Growth

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“…InN is a direct band-gap semiconductor with interesting physical properties such as; an infrared band-gap energy [1,2], a small electron effective mass [3,4], a high electronic mobility [5,6] and radiation resistance [7]. Important technological applications of this material include infrared light emitting diodes, high-speed and high-frequency devices, and photovoltaic systems [5].…”

Section: Introductionmentioning

confidence: 99%

Growth Mechanism and Properties of Self-Assembled InN Nanocolumns on Al Covered Si(111) Substrates by PA-MBE

et al. 2019

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Self-assembled InN nanocolumns were grown at low temperatures by plasma-assisted molecular beam epitaxy with a high crystalline quality. The self-assembling procedure was carried out on AlN/Al layers on Si(111) substrates avoiding the masking process. The Al interlayer on the Si(111) substrate prevented the formation of amorphous SiN. We found that the growth mechanism at 400∘normalC of InN nanocolumns started by a layer-layer (2D) nucleation, followed by the growth of 3D islands. This growth mechanism promoted the nanocolumn formation without strain. The nanocolumnar growth proceeded with cylindrical and conical shapes with heights between 250 and 380 nm. Detailed high-resolution transmission electron microscopy analysis showed that the InN nanocolumns have a hexagonal crystalline structure, free of dislocation and other defects. The analysis of the phonon modes also allowed us to identify the hexagonal structure of the nanocolumns. In addition, the photoluminescence spectrum showed an energy transition of 0.720.166667emeV at 200.166667emnormalK for the InN nanocolumns, confirmed by photoreflectance spectroscopy.

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Chemical vapor deposition of m-plane and c-plane InN nanowires on Si (100) substrate

Rafique

Han

Zhao

2015

Journal of Crystal Growth

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Microstructure of PAMBE-grown InN layers on Si(111)

Cited by 7 publications

References 32 publications

Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer

Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer

Growth Mechanism and Properties of Self-Assembled InN Nanocolumns on Al Covered Si(111) Substrates by PA-MBE

Chemical vapor deposition of m-plane and c-plane InN nanowires on Si (100) substrate

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