2010
DOI: 10.3365/eml.2010.09.117
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Microstructures and Thermoelectric Properties of Spark Plasma Sintered In4Se3

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Cited by 11 publications
(6 citation statements)
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“…Considerable interest in In 4 Se 3 has been motivated by its thermoelectric properties [19,[22][23][24][25][26][27][28][29]. One key issue with In 4 Se 3 is that this material is much harder to cleave than materials such as TiS 3 , and the metal dichalcogenides, which can be mechanically exfoliated with ease, suggesting the adhesion is greater than for TiS 3 [2].…”
Section: Introductionmentioning
confidence: 99%
“…Considerable interest in In 4 Se 3 has been motivated by its thermoelectric properties [19,[22][23][24][25][26][27][28][29]. One key issue with In 4 Se 3 is that this material is much harder to cleave than materials such as TiS 3 , and the metal dichalcogenides, which can be mechanically exfoliated with ease, suggesting the adhesion is greater than for TiS 3 [2].…”
Section: Introductionmentioning
confidence: 99%
“…With regard to the synthesis, impurities are always found in In 4 Se 3 polycrystalline materials after fabrication using melting or sintering methods. [9c],[51a], The role of these impurities in the thermoelectric property of the host materials is unclear. Therefore, it is more desirable to synthesize single phase materials.…”
Section: Discussionmentioning
confidence: 99%
“…Many investigations have been carried out to explore the thermoelectric properties of In 4 Se 3 polycrystalline materials, in order to obtain isotropic thermoelectric properties and to reduce In 4 Se 3 fabrication cost. [9a‐d],, For example, Shi et al . [9c] fabricated polycrystalline In 4 Se 3 , which showed much less anisotropic thermal and electrical transport properties, with the maximum ZT of ∼0.6 along the pressing direction and of ∼0.5 perpendicular to the pressing direction at 700 K.[9c] In order to enhance the ZT of polycrystalline In 4 Se 3 , nanostructuring,[9d] Se deficiency self‐doping[9d] and Pb/Sn co‐doping[8c] have been employed, as detailed as follows.…”
Section: Thermoelectric Applications Of Indium Selenidesmentioning
confidence: 99%
“…This value is calculated using the formula ZT = S 2 sT/(k L + k e ), where S, s, T, k L , and k e represent the Seebeck coefficient, electrical conductivity, absolute temperature, and lattice and electronic thermal conductivity, respectively. [5][6][7][8][9][10] In the medium temperature range, layered In 4 Se 3 emerges as a promising n-type thermoelectric material, showing a unique layered crystal structure. This structure instigates the development of charge density waves (CDWs) and Peierls lattice distortions within the layer planes.…”
Section: Introductionmentioning
confidence: 99%