Microtrench depth and width of SiON plasma etching

Kim, Byungwhan; Bae, Junggi; Lee, Byung Teak

doi:10.1016/j.vacuum.2006.05.011

Cited by 3 publications

(3 citation statements)

References 13 publications

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“…As shown in Figure 9c, the etching rates of the microtrench increased from 3 nm/min to 5 nm/min in the Y direction and from 9 nm/min to 13 nm/min in the X direction when the ICP power increased from 360 W to 450 W. Then, the etching rates rocketed to 16 nm/min in the Y direction and 25 nm/min in the X direction at 540 W ICP power. The reason for this is that the sidewall profile becomes bowed at high ICP power when Cl 2 is used as the etching gas, then the bowed sidewall profile leads to the accumulation of ions at the corner of the mesa bottom, causing an increase in the microtrench etching rate [32]. nm/min to 13 nm/min in the X direction when the ICP power increased from 360 W to 450 W. Then, the etching rates rocketed to 16 nm/min in the Y direction and 25 nm/min in the X direction at 540 W ICP power.…”

Section: Resultsmentioning

confidence: 99%

“…nm/min to 13 nm/min in the X direction when the ICP power increased from 360 W to 450 W. Then, the etching rates rocketed to 16 nm/min in the Y direction and 25 nm/min in the X direction at 540 W ICP power. The reason for this is that the sidewall profile becomes bowed at high ICP power when Cl2 is used as the etching gas, then the bowed sidewall profile leads to the accumulation of ions at the corner of the mesa bottom, causing an increase in the microtrench etching rate [32]. BCl3 as an additive in the etching gas can increase the etching rate of GaN [33].…”

Section: Resultsmentioning

confidence: 99%

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Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics

et al. 2020

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The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio of mixed gas, flow rate, and chamber pressure, etc. In particular, the microtrench at the bottom corner of the mesa sidewall was eliminated by a combination of ICP dry etching and tetramethylammonium hydroxide (TMAH) wet treatment. Finally, a highly anisotropic profile of the mesa sidewall was realized by using the optimized etch recipe, and a quasi-vertical GaN SBD was demonstrated, achieving a low reverse current density of 10−8 A/cm2 at −10 V.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics

et al. 2020

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“…[47]. We attribute this phenomenon to the formation of charged polymer SiF x O y after the increase of the oxygen ratio [49] , which attracts ions near the sidewall, increasing the rate of chemical reactions near the sidewall. These microtrenches, although no direct comparison has been made, may increase the scattering loss of the waveguide.…”

Section: (G)mentioning

confidence: 91%

Fabrication of the high-Q Si3N4 microresonators for soliton microcombs

et al. 2022

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The microresonator-based soliton microcomb has shown a promising future in many applications. In this work, we report the fabrication of high quality (Q) Si 3 N 4 microring resonators for soliton microcomb generation. By developing the fabrication process with crack isolation trenches and annealing, we can deposit thick stoichiometric Si 3 N 4 film of 800 nm without cracks in the central area. The highest intrinsic Q of the Si 3 N 4 microring obtained in our experiments is about 6 × 10 6 , corresponding to a propagation loss as low as 0.058 dBm/cm. With such a high Q film, we fabricate microrings with the anomalous dispersion and demonstrate the generation of soliton microcombs with 100 mW on-chip pump power, with an optical parametric oscillation threshold of only 13.4 mW. Our Si 3 N 4 integrated chip provides an ideal platform for researches and applications of nonlinear photonics and integrated photonics.

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