Microwave amplification in a bulk semiconductor

Thim, H.W.; Barber, Mark; Hakki, B.W.; Knight, Stephen; Uenohara, M.

doi:10.1109/t-ed.1965.15552

Cited by 3 publications

(2 citation statements)

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“…The most satisfactory argument is that advanced by McCumber and Chynoweth, although the actual value of the minimum no I product may be larger than the crude estimates made above as a result of the stabilizing effect of diffusion and energy transport processes (McCumber and Chynoweth 1966). The observed values of the minimum no I product for instability vary from 10l1 cm-2 (Day 1966) to 5 x 1011 cm-2 (Thim and Barber 1966).…”

Section: W = K Z ' -I ( ~ J -~+ D K ~)mentioning

confidence: 89%

“…T h e behaviour at low frequencies is similar to that found from equation (4.13), but the negative resistance disappears at high frequencies after a few cycles of oscillation. The negative resistance occurs in the right frequency range to account for the microwave amplification first observed in high resistivity gallium arsenide by Thim et al (1965) but the calculated impedance does not give the correct values of the gain or the oscillation threshold. The calculations of Mahrous and Robson (1966) and of were carried out by explicit evaluation of the integrals (4.11) and (4.12) for simple three-line approximations to the velocity-field characteristic.…”

Section: W = K Z ' -I ( ~ J -~+ D K ~)mentioning

confidence: 96%

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The Gunn effect

Butcher

1967

Rep. Prog. Phys.

149

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Microwave current oscillations in n-type polar semiconductors at high electric fields were first observed by Gunn in 1963. T h e basic physical mechanism responsible for the effect is the progressive transfer of hot electrons from high mobility valleys to low mobility valleys in the conduction-band structure as the field increases. The resulting negative differential mobility makes the homogeneous electron distribution unstable. Narrow domains of extremely high field build up 97 98 P. N . Butcher which propagate uniformly through the specimen. Recent theoretical and experimental studies of the electron-transfer mechanism and domain propagation are described. T h e emphasis is on the basic phenomena in gallium arsenide and microwave applications of the effect are not discussed.

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Section: W = K Z ' -I ( ~ J -~+ D K ~)mentioning

confidence: 89%

Section: W = K Z ' -I ( ~ J -~+ D K ~)mentioning

confidence: 96%