Microwave Amplification in a Dc-Biased Bulk Semiconductor

Thim, H.W.; Barber, Mark; Hakki, B.W.; Knight, Stephen; Uenohara, M.

doi:10.1063/1.1754360

Cited by 72 publications

(3 citation statements)

References 5 publications

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“…4, it appears that for LSA operation of diodes of good-quality n-GaAs at room temperature, the ratio of doping to frequency h should be in the following range (20) which is in good agreement with experimental observations of the author1,l2 and Eastman and Kennedy.13 …”

Section: Gpeu(t)/u(t) Given Bysupporting

confidence: 79%

LSA Oscillator-Diode Theory

Copeland¹

1967

Journal of Applied Physics

148

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of some of the contacts. This has not as yet been investigated further.In summary, evaporated metallic contacts (Mg, In, Au, Pd, Pt) have been made to conducting strontium titanate single crystals and measurements of the electrical properties of the contacts were carried out with the following results:(1) The electrical properties of the contacts are different for the different contact metals.(2) The low-work-function metals (Mg and In) form low-resistance contacts. JOURNAL OF APPLIED PHYSICS(3) The high-work-function metals (Au, Pd, and Pt) form blocking contacts.(4) None of the blocking contacts can be characterized by a single value of !1cP, i.e., each blocking contact behaves as if it consists of patches of different !1cP. ACKNOWLEDGMENTSIt is a pleasure to thank S. S. Perlman and R. S.Silver for helpful suggestions and assistance concerning reduction and etching of SrTi0 3 • We also wish to thank J. Breece for assistance in carrying out some of the measurements.The efficiency, negative resistance, and conditions for space-charge control relevant to operation of a bulk semiconductor diode in the limited space-charge accumulation (LSA) mode of oscillation are discussed. Numerical results for n-GaAs indicate a maximum dc to rf-conversion efficiency of 18.5% for sine-wave excitation. The usable range of doping to frequency for n-GaAs is found to be 2X1Q4 to 2x1Q6 sec/cm 3 with an optimum value of about 6 X 1Q4 sec/cm s . Although a reduction in efficiency at frequencies above 100 GHz is expected due to the finite response time of GaAs, worthwhile efficiency may be obtained at several hundred GHz.

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Section: Gpeu(t)/u(t) Given Bysupporting

confidence: 79%

LSA Oscillator-Diode Theory

Copeland¹

1967

Journal of Applied Physics

148

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“…Gunn [1964] observed instabilities of current and microwave oscillations in homogeneous samples of GaAs or InP when uniform electric fields were applied to the samples, which were in microwave cavities. Many workers have since observed the effect [e.g., Thim et al, 1965: Allen et al, 1965: Kroemer [1964] supplied a fairly complete theory. Hakki and Irvin [1965] obtained 15.5 m W CW at 4.35 GHz and 1.8 W pulsed at 5 GHz.…”

Section: Microwave Interactions In Solidsmentioning

confidence: 99%

U.S.A. National Committee Report, Fifteenth URSI Assembly, Munich, September 1966: Radio Electronics; Progress in Radio Electronics

Heffner¹,

Gould²,

Siegman³

et al. 1966

Radio Science

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The generation of new laser devices, techniques, ideas, and applications continued at an unslowing pace during 1963–1966. While no large‐scale or commercially important laser applications have yet emerged, lasers have found innumerable and often irreplaceable applications both in science and in technology. Increasing numbers of useful commercial applications are slowly beginning to emerge at the end of the period.

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“…The Bloch gain profile, which is shaped as a familiar dispersion curve, is not limited to SLs. It was recently predicted [10] and observed [11] in intersubband transitions of quantum cascade lasers, but dispersive gain profiles have been also found in the microwave responses of Josephson junctions [12] and Thim amplifiers [13]. Here we consider the Bloch gain in its traditional meaning as an effect occurring due to Bloch oscillations in a single energy band.…”

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confidence: 95%

Model of the Influence of an External Magnetic Field on the Gain of Terahertz Radiation from Semiconductor Superlattices

2009

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We theoretically analyze the influence of magnetic field on small-signal absorption and gain in a superlattice. We predict a very large and tunable THz gain due to nonlinear cyclotron oscillations in crossed electric and magnetic fields. In contrast to Bloch gain, here the superlattice is in an electrically stable state. We also find that THz Bloch gain can be significantly enhanced with a perpendicular magnetic field. If the magnetic field is tilted with respect to the superlattice axis, the usually unstable Bloch gain profile becomes stable in the vicinity of Stark-cyclotron resonances.

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Microwave Amplification in a Dc-Biased Bulk Semiconductor

Cited by 72 publications

References 5 publications

LSA Oscillator-Diode Theory

LSA Oscillator-Diode Theory

U.S.A. National Committee Report, Fifteenth URSI Assembly, Munich, September 1966: Radio Electronics; Progress in Radio Electronics

Model of the Influence of an External Magnetic Field on the Gain of Terahertz Radiation from Semiconductor Superlattices

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