Microwave and Millimeter-Wave Resonant-Tunnelling Devices

Sollner, T. C. L. G.; Brown, E. R.; Goodhue, W. D.; Le, H. Q.

doi:10.1007/978-3-642-74751-9_6

Cited by 29 publications

(9 citation statements)

References 40 publications

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“…Since the resonant-tunneling I-V curve is nonlinear, especially near the negative differential resistance region, the same device can act as both a mixer and an oscillator (Sollner et al, 1990). Figure 9 shows the down-conversion efficiency for a selfoscillating mixer.…”

Section: Resonant-tunneling Oscillatorsmentioning

confidence: 99%

High-Frequency Applications of Resonant-Tunneling Devices

Sollner

Brown

Parker

et al. 1990

Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures

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Section: Resonant-tunneling Oscillatorsmentioning

confidence: 99%

High-Frequency Applications of Resonant-Tunneling Devices

Sollner

Brown

Parker

et al. 1990

Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures

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“…The negative differential resistance (NDR) of the RTDs is a basis for high-frequency oscillators, and it was demonstrated that the NDR of the RTD exists even in the THz frequency range. 1,2) The oscillation frequency of the RTD oscillators has continuously increased in this decade, [3][4][5][6] and at present, it is 1.92 THz. 7,8) Wireless communication using such RTD oscillators is one of the most promising applications and is now being studied intensively.…”

Section: Introductionmentioning

confidence: 99%

A wide-range variable-frequency resonant tunneling diode oscillator using a variable resonator suitable for simple MEMS process

Yamashita¹,

Nakano²,

Mori³

et al. 2018

Jpn. J. Appl. Phys.

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A resonant tunneling diode oscillator having a wide frequency variation range based on a novel MEMS resonator was proposed, which exploits the change in the signal propagation velocity on a coplanar waveguide according to a movable ground plane. First, we discussed the velocity modulation mechanism, and clarified the importance of the dielectric constant of the substrate. Then, a prototype device oscillating in a 10 to 20 GHz frequency range was fabricated to demonstrate the basic operation. A large and continuous increase in the oscillation frequency of about two times was achieved with this device. This is promising for various applications including THz spectroscopy.

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“…The response of RTD is connected to population and depopulation of the resonant states in the quantum well (QW) of the diode. Therefore, it is typically accepted [4,5] that the inherent response-time limitation of such structures should be determined by the resonantstate lifetime (τ ). Also it is intuitively expectable [5] that the current and conductance of the structure should tend to zero, when ωτ ≫ 1.…”

Section: Introductionmentioning

confidence: 99%

Experimental demonstration of resonant-tunneling-diode operation beyond quasibound-state-lifetime limit

Feiginov

Chowdhury

2009

J. Phys.: Conf. Ser.

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Abstract. We show, first, that the charge relaxation (response) time of resonant-tunneling diode (RTD) can be significantly shorter or longer than the resonant-state lifetime, depending on RTD operating point and RTD parameters. Coulomb interaction of electrons is responsible for the effect. Second, we demonstrate that the operating frequencies of RTDs are limited neither by resonant-state lifetime, nor by relaxation time; particularly in the RTDs with heavily doped collector, the differential conductance can stay negative at the frequencies far beyond the limits imposed by both time constants. We provide experimental evidences for both effects. IntroductionResonant-tunneling diodes (RTDs, see Fig. 1) are the most simple structures with resonant tunneling. Such structures were intensively studied in the last several decades, they are used for studies of fundamental aspects of tunneling and they are also attractive for practical applications. E.g., RTDs belong to the fastest [1] operating devices nowadays and their negative differential conductance (NDC) is useful for high-frequency oscillators [2,3]. The question that arises in connection with any electronic device: what is limiting its response time and its operating frequencies? The response of RTD is connected to population and depopulation of the resonant states in the quantum well (QW) of the diode. Therefore, it is typically accepted [4,5] that the inherent response-time limitation of such structures should be determined by the resonantstate lifetime (τ ). Also it is intuitively expectable [5] that the current and conductance of the structure should tend to zero, when ωτ ≫ 1.One of us has shown theoretically previously that the intuitive picture is not generally correct [6,7,8]. The objective of the present work is to demonstrate that experimentally. We show that the response time or, equivalently, the time constant of charge-relaxation processes (τ rel ) can be significantly shorter than τ . Such behavior is the consequence of the Coulomb interaction between the charge carriers in the structures [6,7]. We also show that, under certain conditions, the Coulomb interaction can lead to the opposite effect, when τ rel becomes longer than τ . Additionally, we demonstrate that, as predicted [8], the resonant-tunneling conductance can

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Microwave and Millimeter-Wave Resonant-Tunnelling Devices

Cited by 29 publications

References 40 publications

High-Frequency Applications of Resonant-Tunneling Devices

High-Frequency Applications of Resonant-Tunneling Devices

A wide-range variable-frequency resonant tunneling diode oscillator using a variable resonator suitable for simple MEMS process

Experimental demonstration of resonant-tunneling-diode operation beyond quasibound-state-lifetime limit

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