Microwave frequency small-signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT

Abstract

This article presents an accurate and efficient extraction procedure for microwave frequency small‐signal equivalent circuit parameters of AlInN/GaN metal‐oxide‐semiconductor high electron mobility transistor (MOSHEMT). The parameter extraction technique is based on the combination of conventional and optimization methods using the computer‐aided modeling approach. The S‐, Y‐, and Z‐ parameters of the model are extracted from extensive dynamic AC simulation of the proposed device. From the extracted Y‐ and Z‐ parameters the pad capacitances, parasitic inductances and resistances are extracted by operating the device at low and high frequency pinch‐off condition depending upon requirement. Then, the intrinsic elements are extracted quasi analytically by de‐embedding the extrinsic parameters. S‐parameter simulation of the developed small‐signal equivalent circuit model is carried out and is compared with TCAD device simulation results to validate the model. The gradient based optimization approach is used to optimize the small‐signal parameters to minimize the error between developed SSEC model and device simulation based s‐parameters. The microwave characteristics of optimized SSEC model is carried out (fT = 169 GHz and fmax = 182 GHz) and compared with experimental data available from literature to validate the model.

Modeling and simulation of DC and microwave characteristics of AlInN(AlGaN)/AlN/GaN MOSHEMTs with different gate lengths

“…25 The SCE is addressed in TCAD simulations by including the quantum hydrodynamic transport model. 18,[24][25][26][27][28] Still, the reduction of L g to submicrometer range is a challenge.…”

“…The SCEs in the proposed model are addressed by including a δV FB shift in the flat‐band voltage, and this phenomenon is considered by including δV FB = V d /SCE, where the value of SCE is experimentally determined . The SCE is addressed in TCAD simulations by including the quantum hydrodynamic transport model . Still, the reduction of L g to submicrometer range is a challenge.…”

A de‐embedding method with matrix rectification and influences of residual errors on model parameters extraction of InP HEMTs

“…Next, de‐embedded S ‐parameters of the HEMT device is delivered to a small‐signal modeling process to investigate the influence of residual error on model parameters extraction. The modeling process is quite similar with well‐developed method for HEMT devices in literature, but it starts simply from intrinsic topology of the small‐signal model illustrated in Figure . Y ‐parameters of the intrinsic equivalent circuit can be simply expressed as where Y GS , Y GD , and Y DS are passive admittances of corresponding branch, …”

Multibias and temperature dependence of the current‐gain peak in GaN HEMT

“…A crucial figure of merit for microwave transistors to assess their RF performance is the short‐circuit current‐gain ( h 21 ). This parameter is an important indicator to identify the unity current‐gain frequency or cut‐off frequency ( f T ) and it should move off with a slope of −20 dB/decade . However, it is quite often noticed that at high frequencies, h 21 deviates from its optimal behavior, owing to the occurrence of the current‐gain peak (CGP).…”

“…This parameter is an important indicator to identify the unity current-gain frequency or cut-off frequency (f T ) and it should move off with a slope of −20 dB/decade. [1][2][3] However, it is quite often noticed that at high frequencies, h 21 deviates from its optimal behavior, owing to the occurrence of the current-gain peak (CGP). The earlier studies have demonstrated that the origin of the CGP is because of the resonance of extrinsic inductances and the intrinsic capacitances.…”