Microwave modeling and parameter extraction method for multilayer on-chip inductors

Abstract

A new equivalent circuit model for 3D multilayer on-chip inductors based on physical principles is presented in this article. The model consists of multiple elementary cells, and every cell in the distributed model represents a single stacked inductor. The model also takes into account the distributed effect of the via-hole with feedline which is used to connect the test pad to the lowest mental layer. A parameter-extraction approach for proposed model which combines the analytical approach and empirical optimization procedure is investigated. Good agreement is obtained between simulated and measured results for a six metal layers on-chip inductor on silicon in the frequency range of 50 MHz to 20 GHz.

Characterization of high‐photocurrent and high‐speed INP‐based uni‐traveling‐carrier photodiodes at 1.55‐μm wavelength

“…The value of C dd can be determined using the procedure as follows . Setting initial value of C dd . Calculating the error as a function of the reflection coefficient at port 2: where is the error function criterion, superscript s denotes the simulated S‐parameter, m denotes the measured S ‐parameter, and i = (0… N−1) is the number of sampling points . If ε > ε 0 (ε 0 is the error target, normally 0.1%), the value of C dd needs to be updated to reduce ε. If ε < ε 0 is achieved, the value of C dd can be confirmed. …”

“…An accurate model parameter extraction technique of UTC‐PD is important for understanding of the device physical mechanisms and improving the device performances . Development of the equivalent circuit models of UTC‐PDs is also essential as it allows the existing well‐developed circuit simulation software to be utilized in the design and analysis of optoelectronic circuits .…”

“…The accuracy of the results depends greatly on the parameters of the equivalent circuit model, thus a good equivalent circuit model is not merely helpful for prediction of the performances of devices but also important for extracting model parameters conveniently and accurately . Numerical optimization techniques are usually used to determine the optimal values of model parameters .…”

“…It is obtained by using optimization method. The results obtained from analytical method are taken as an initial value for the subsequent fitting and optimization procedure, leading to the final results of all the parameters of the equivalent circuit model . The semi‐analytical method combines the advantages of the analytical and numerical optimization methods, to enable the extracted results more accurate.…”

RF modeling and parameter extraction for GaAs‐based on‐chip inductors

“…The network‐based extraction techniques are still challenging and need for further improvements due to the diversity of process technologies. By using open/short/through test structures, the parasitic capacitances and inductances can be determined directly . The intrinsic elements can be extracted after de‐embedding the parasitic.…”