Microwave Schottky Barrier Diodes

Anand, Y.

doi:10.1007/978-1-4684-4655-5_6

Cited by 5 publications

(3 citation statements)

References 55 publications

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“…The non-zero background voltage in Fig. 1b is due to the nonlinear IV characteristic of the FM/ n -GaAs Schottky contact 26 , which rectifies the microwave current generated in the device. We see that the interface voltage decreases on resonance, which, as will be explained in detail below, is the result of the decrease in the projection of S on .…”

Section: Resultsmentioning

confidence: 99%

Dynamic detection of electron spin accumulation in ferromagnet–semiconductor devices by ferromagnetic resonance

Liu¹,

Patel²,

Peterson³

et al. 2016

Nat Commun

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A distinguishing feature of spin accumulation in ferromagnet–semiconductor devices is its precession in a magnetic field. This is the basis for detection techniques such as the Hanle effect, but these approaches become ineffective as the spin lifetime in the semiconductor decreases. For this reason, no electrical Hanle measurement has been demonstrated in GaAs at room temperature. We show here that by forcing the magnetization in the ferromagnet to precess at resonance instead of relying only on the Larmor precession of the spin accumulation in the semiconductor, an electrically generated spin accumulation can be detected up to 300 K. The injection bias and temperature dependence of the measured spin signal agree with those obtained using traditional methods. We further show that this approach enables a measurement of short spin lifetimes (<100 ps), a regime that is not accessible in semiconductors using traditional Hanle techniques.

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Section: Resultsmentioning

confidence: 99%

Dynamic detection of electron spin accumulation in ferromagnet–semiconductor devices by ferromagnetic resonance

Liu¹,

Patel²,

Peterson³

et al. 2016

Nat Commun

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“…The Schottky junction, depicted as a diode symbol in Fig. 1(a), is modeled as voltage-dependent junction capacitance and resistance [23]. The diode parasitic resistance due to the un-depleted active junction epi-layer is a voltage-dependent epi-resistance.…”

Section: Schottky Diode Equivalent-circuit Modelmentioning

confidence: 99%

“…Since the equivalent circuit is reciprocal, it is sufficient to use only the -parameter to calculate the total capacitance, as in (4). By using a set of multi-bias -parameters, the junction capacitance [23] and the parasitic capacitance is extracted by fitting (4) to ( 5), (4) (5) where is a zero-biased junction capacitance, and is a parameter representing the doping profile of the active junction layer ( for a uniformly doped junction layer). The diode is estimated from the de-embedding structure, using (4), i.e., --.…”

Section: A Step 1-capacitance Extractionmentioning

confidence: 99%

Analytical Extraction of a Schottky Diode Model From Broadband $S$-Parameters

Tang

Drakinskiy

Yhland

et al. 2013

IEEE Trans. Microwave Theory Techn.

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We present an analytic method to extract Schottky diode parasitic model parameters. All the ten unknown model parameters are extracted via a straightforward step-by-step procedure. The challenges for a proper finger inductance and series resistance extraction are discussed and solutions are recommended. The proposed method is evaluated using three sets of -parameter data for GaAs-based planar Schottky diodes, i.e., data from measurement up to 110 GHz and 3-D electromagnetic full-wave simulations up to 600 GHz. The extracted models agree well with the measured and simulated data.

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Schottky Contacts on Silicon

Werner

Rau

1994

Springer Series in Electronics and Photonics

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Microwave Schottky Barrier Diodes

Cited by 5 publications

References 55 publications

Dynamic detection of electron spin accumulation in ferromagnet–semiconductor devices by ferromagnetic resonance

Dynamic detection of electron spin accumulation in ferromagnet–semiconductor devices by ferromagnetic resonance

Analytical Extraction of a Schottky Diode Model From Broadband $S$-Parameters

Schottky Contacts on Silicon

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