Microwave Semiconductor Devices

Yngvesson, Sigfrid

doi:10.1007/978-1-4615-3970-4

Cited by 64 publications

(15 citation statements)

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“…Energy difference between Γ and L valleys in GaAs ∆E ΓL = 0.31 eV [37] Effective masses m * n = 0.067m e ; m * p = 0.082m e [49] Intrinsic carrier concentration [48] where N c = 2…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

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Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Pisarenko

Ryndin

2016

Electronics

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Abstract:In this paper, we consider the problem of the research and development of high-speed semiconductor photodetectors suitable for operation as parts of on-chip optical interconnections together with the high-speed laser modulators based on the A III B V nanoheterostructures. This research is aimed at the development of the models and modelling aids designed for the simulation of carrier transport and accumulation processes taking place in on-chip photosensitive devices during the detection of subpicosecond laser pulses. Another aim of the paper is to apply the aforementioned aids for the investigation of GaAs p-i-n and Schottky-barrier photodiodes. We propose the non-stationary drift-diffusion models, an original numerical simulation technique and the applied software allowing one to simulate the photosensitive devices with different electrophysical, constructive and technological parameters. We have taken into account different kinds of carrier generation and recombination processes, the effects of electron intervalley transition and carrier drift velocity saturation in order to improve the simulation results' adequacy. We have concluded that the influence of these effects on the performance of photodetectors for on-chip optical interconnections is significant. The response time of GaAs p-i-n and Schottky-barrier photodiodes calculated taking into account the drift velocity dependence on electric field intensity is insufficient for the adequate detection of subpicosecond laser pulses. According to the simulation results, it is reasonable to develop the methods aimed at the increase in the drift velocity of charge carriers in the photodetector active region by means of built-in electric field reduction.

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“…Energy difference between Γ and L valleys in GaAs ∆E ΓL = 0.31 eV [37] Effective masses m * n = 0.067m e ; m * p = 0.082m e [49] Intrinsic carrier concentration [48] where N c = 2…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

“…∆E is the energy difference between the valleys; r is the ratio between state density in the upper valley and the lower one calculated utilizing the following equation [37]:…”

Section: Models and Simulation Methodsmentioning

confidence: 99%

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Pisarenko

Ryndin

2016

Electronics

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“…Higher resistance CNTs have lower values for S I , roughly in inverse proportion to the resistance, and therefore have about the same S V . Using standard small-signal microwave detector theory 19 we can calculate the current responsivity from the following expression:…”

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confidence: 99%

Direct and heterodyne detection of microwaves in a metallic single wall carbon nanotube

Rodriguez‐Morales

Zannoni

Nicholson

et al. 2006

Applied Physics Letters

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a These authors contributed equally to this paper; b email yngvesson@ecs.umass.edu ABSTRACT. This letter reports measurements of microwave (up to 4.5 GHz) detection in metallic single-walled carbon nanotubes. The measured voltage responsivity was found to be 114 V/W at 77K. We also demonstrated heterodyne detection at 1 GHz. The detection mechanism can be explained based on standard microwave detector theory and the nonlinearity of the DC IV-curve. We discuss the possible causes of this nonlinearity. While the frequency response is limited by circuit parasitics in this measurement, we discuss evidence that indicates that the effect is much faster and that applications of carbon nanotubes as terahertz detectors are feasible.

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“…The basic idea, that of applying bulk-type effects, was of course quite old, but this is not unusual if one examines recent technological history. To mention one single example, the hetero-junction bipolar transistor was discussed as early as the 1950s, but was not realizable until the mid 1980s (see Yngvesson, 1991).…”

Section: A Practical Hot Electron Mixermentioning

confidence: 98%

“…The sequence of layers grown in the same as is used for AIGaAs/GaAs Heterojunction Field Effect Transistors (HFETs) (Zimmerman & Salmer, 1990;Yngvesson, 1991). The device is contained within a mesa, which is surrounded by semiinsulating GaAs for isolation.…”

Section: Deg Device Configuration and Test Setupmentioning

confidence: 99%

Focal plane arrays for submillimeter waves using two‐dimensional electron gas elements

Yang

Lau

Yngvesson

1994

Remote Sensing Reviews

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This paper describes a research effort, supported by the NASA Innovative Research Program, aimed at developing new types of THz low noise receivers, based on bulk effect ("hot electron") nonlinearities in the Two-Dimensional Electron Gas (2DEG) Medium, and the inclusion of such receivers in focal plane arrays. The original motivation and objectives of the research are discussed at some length. The results obtained cover several different sub-areas, and are discussed briefly, with references to other more detailed publications. 2DEG mixers have been demonstrated at 35 and 94 GHz with three orders of magnitude wider bandwidth than previous hot electron mixers. These mixers employ a new mode of operation, which was invented during this program. Based on the results of this research, it is now possible to design a bulk effect mixer focal plane array for the THz range, which is anticipated to have a DSB receiver noise temperature of 500-1000 K.

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Microwave Semiconductor Devices

Cited by 64 publications

References 0 publications

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Direct and heterodyne detection of microwaves in a metallic single wall carbon nanotube

Focal plane arrays for submillimeter waves using two‐dimensional electron gas elements

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