Midwave infrared barrier detector based on Ga-free InAs/InAsSb type-II superlattice grown by molecular beam epitaxy on Si substrate

Durlin, Quentin; Pérez, Jean-Philippe; Cerutti, L.; Rodriguez, J. B.; Cerba, Tiphaine; Baron, T.; Tournié, E.; Christol, Philippe

doi:10.1016/j.infrared.2018.10.006

Cited by 34 publications

(10 citation statements)

References 20 publications

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“…Similarly, there are various possibilities for the detection part of the sensor. Photodetectors can also be grown on Si 118 , 119 , or the same heterostructure can be used as a laser and detector on different parts of the wafer 120 , 121 .…”

Section: Discussionmentioning

confidence: 99%

Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

et al. 2022

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There is currently much activity toward the integration of mid-infrared semiconductor lasers on Si substrates for developing a variety of smart, compact, sensors based on Si-photonics integrated circuits. We review this rapidly-evolving research field, focusing on the epitaxial integration of antimonide lasers, the only technology covering the whole mid-to-far-infrared spectral range. We explain how a dedicated molecular-beam epitaxy strategy allows for achieving high-performance GaSb-based diode lasers, InAs/AlSb quantum cascade lasers, and InAs/GaInSb interband cascade lasers by direct growth on on-axis (001)Si substrates, whereas GaAs-on-Si or GaSb-on-Si layers grown by metal-organic vapor phase epitaxy in large capability epitaxy tools are suitable templates for antimonide laser overgrowth. We also show that etching the facets of antimonide lasers grown on Si is a viable approach in view of photonic integrated circuits. Remarkably, this review shows that while diode lasers are sensitive to residual crystal defects, the quantum cascade and interband cascade lasers grown on Si exhibit performances comparable to those of similar devices grown on their native substrates, due to their particular band structures and radiative recombination channels. Long device lifetimes have been extrapolated for interband cascade lasers. Finally, routes to be further explored are also presented.

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Section: Discussionmentioning

confidence: 99%

Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

et al. 2022

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“…[83] Generally, the best performing T2SL PDs with low dark current densities are achieved using barrier structures that are roughly four to five orders of magnitude higher than "Rule 07" at low operating temperatures (70-99 K) in the MWIR range. The variation in dark current density performance, due to changes in b) from 150 to 170 K for barrier Ga-free, [22,57,82,83,129,[144][145][146][147][148][160][161][162][163]166,192,223,224] nonbarrier Ga-free, [118,130,167,[220][221][222]225] barrier Gabased, [87,149,168,170,172,[174][175][176]183,193,219,[226][227][228] and nonbarrier Ga-based [68,101,108,111,173,[1...…”

Section: Dark Current Densitymentioning

confidence: 99%

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Alshahrani

Kesaria

Anyebe

et al. 2021

Advanced Photonics Research

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Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for environmental sensing of hazardous gases, security, defense, and medical applications. Mercury cadmium telluride (MCT) materials have been the most used detector in the MWIR range. However, it is plagued by several challenges including toxicity concerns, a high rate of Auger nonradiative recombination, a large band‐to‐band (BTB) tunneling current, nonuniformity, and the need for cryogenic cooling. Theoretically, it is predicted that type‐II superlattice (T2SL) materials can emerge as an alternative with the potential to outperform the current state‐of‐the‐art MCT PDs due to suppression of Auger recombination associated with bandgap engineering and reduced BTB tunneling current caused by the larger effective mass. Based on this theoretical prediction, it is believed that T2SL have the potential to operate at high temperatures and overcome the size, weight, and power consumption limitations of MCT. Herein, a detailed review of the fundamental material properties of T2SL PDs is provided while providing a comparison of the optical and electrical performances of Ga‐free (InAs/InAsSb) and Ga‐based (InAs/GaSb) T2SL PDs. Finally, recent advances in IR detection technologies including focal plane arrays and quantum cascade infrared photodetectors are explored.

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“…[8][9][10] Though the commercial silicon-based photodetector shows excellent performance, its detecting ability is limited to UV and visible light range due to its wide bandgap of 1.1 eV. [11][12][13][14] To extend near-infrared (NIR) detection, conventional III-V compounds such as InGaAs, [15,16] InSb, [17,18] InAsSb [19] as well as epitaxial superlattice materials [20,21] have been primarily explored for high-speed electronic and efficient optoelectronic devices. However, their devices suffer from various technical challenges including mechanical inflexibility, complicated, and expensive manufacturing processes.…”

Section: Introductionmentioning

confidence: 99%

Colloidal InSb Quantum Dots/Organic Integrated Bulk Heterojunction for Fast and Sensitive Near‐Infrared Photodetectors

Zhang

et al. 2022

Advanced Photonics Research

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It remains urgent to integrate conductive InSb colloidal quantum dots (CQDs) for sensitive and fast near‐infrared (NIR) photodetection applications. Herein, nanocrystallized InSb CQDs (<12 nm in diameter) have been successfully obtained via hot‐injection procedure, and demonstrated a very narrow absorption peak centered at 1406 nm with a full width at half maximum (FWHM) of 10.3 nm and a broader absorption peak at 1702 nm, indicating strong quantum‐confined effect. After integrating these InSb CQDs with [6,6]‐phenyl C61‐butyric acid methyl ester (PCBM) and polymeric triphenyldiamine (poly(N,N′‐diphenylben‐zidine diphenylether), poly‐TPD) bulk junction, the obtained Si/SiO2/InSb CQDs:PCBM:poly‐TPD/Ag photodetector has reached long‐wavelength response up to 1400 nm, fast response time (<80 ms), and superior on/off ratio. In specific, charge carriers can be effectively transported due to favorable energy alignment and interpenetrating network formed in the inorganic/organic blend films. The work provides a new strategy to synthesize high‐quality InSb CQD and reveal its starting point toward low‐cost, practical, and sensitive next‐generation NIR detection.

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Midwave infrared barrier detector based on Ga-free InAs/InAsSb type-II superlattice grown by molecular beam epitaxy on Si substrate

Cited by 34 publications

References 20 publications

Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Colloidal InSb Quantum Dots/Organic Integrated Bulk Heterojunction for Fast and Sensitive Near‐Infrared Photodetectors

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