Midwave thermal infrared detection using semiconductor selective absorption

Shea, Ryan P.; Gawarikar, Anand S.; Talghader, Joseph J.

doi:10.1364/oe.18.022833

Cited by 11 publications

(11 citation statements)

References 9 publications

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“…Discrete responsivity peaks have been observed for hBN/ black arsenic phosphorous/hBN detectors [8] in photocon-ductive mode at λ = 3.4 μm, 5.0 μm, and 7.7 μm. Analytical simulation of PbSe [10] and HgCdTe [11] based detectors have been carried out which also considering pixel structure realizable through complex lithographic technique. We have utilized the advantages of colloidal quantum dots (CQDs) [12−16] with lower fabrication costs [17] to develop MWIR FPA.…”

Section: Introductionmentioning

confidence: 99%

Uncooled Mid-wave Infrared Focal Plane Array Using Band Gap Engineered Mercury Cadmium Telluride Quantum Dot Coated Silicon ROIC

Chatterjee

Pendyala

Jagtap

et al. 2019

e-J. Surf. Sci. Nanotechnol.

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The dominant photon detectors and focal plane arrays (FPAs) in the mid-wave infrared (MWIR) range (λ = 3 μm to 5 μm) use single crystal InSb and HgCdTe materials. The cost of these detectors is high, and cooling at approximately 80 K to 120 K is required to reduce the dark current. Colloidal quantum dots (CQDs) can be used to provide the speed and detectivity (D*) of the quantum detectors with lower fabrication costs than those of single crystal epitaxial materials. The aim of this study is to develop a MWIR area array sensor with an HgCdTe-ternary alloyed semiconductor CQD using a commercially available silicon readout integrated circuit (ROIC). First, we synthesized a solution processed HgCdTe CQD responsive in the MWIR range at room temperature and developed a Schottkey junction photodiode array of 10 × 10 pixels based on the same quantum dots (QDs) to produce a HgCdTe-Si interface suitable for a MWIR photodiode at room temperature. After ensuring its functionality, we developed a 320 × 256-pixel focal plane array (FPA) responsive in the MWIR region by hybridization of the HgCdTe CQD layer over a silicon ROIC die with a direct injection input circuit. The FPA was operated using an indigenously developed Field Programmable Gate Array (FPGA)-based drive unit, and different IR targets were imaged to evaluate its use as a low-cost MWIR FPA. NEΔT value of 4 K achieved at room temperature.

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Section: Introductionmentioning

confidence: 99%

Uncooled Mid-wave Infrared Focal Plane Array Using Band Gap Engineered Mercury Cadmium Telluride Quantum Dot Coated Silicon ROIC

Chatterjee

Pendyala

Jagtap

et al. 2019

e-J. Surf. Sci. Nanotechnol.

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“…If an uncooled IR sensor with a wavelength selective function could be fabricated, then advanced uncooled IR sensors with color information and multicolor imaging could be developed, which would be advantageous for a wide range of applications, such as fire detection, gas analysis, medical imaging, and material recognition [1]. Typical methods for realizing wavelength selectivity include a narrow band-pass filter attached to a sensor [2], control of absorbing materials, multilayer structures [3], and optical resonant structures [4] that require gap or thickness control. These typical approaches cannot easily integrate different pixels in an array, which is a serious disadvantage for multicolor imaging.…”

Section: Introductionmentioning

confidence: 99%

Multi-color imaging with silicon-on-insulator diode uncooled infrared focal plane array using through-hole plasmonic metamaterial absorbers

Fujisawa

Ogawa

Hata

et al. 2015

2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

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This paper reports a silicon-on-insulator diode uncooled infrared focal plane array (IRFPA) with through-hole plasmonic metamaterial absorbers (TH-PLMAs) for multi-color imaging with a 320×240 array format. Through-holes formed on the PLMA can reduce the thermal mass while maintaining both the single-mode and high absorption due to plasmonic metamaterial structures, which results in fast response and high responsivity. The detection wavelength of the PLMA with through-holes can be controlled over a wide range of the IR spectrum by varying the size of the micropatches on the top layer.

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“…Wavelength-and polarization-selective functions can be realized for PLAs without the attachment of filters, 13 multilayer structures, 14 mirrors, 15 or polarizers, 16,17 which effectively reduces the cost and additional space requirements of optical systems. Multicolor/ polarimetric imaging can, therefore, be realized by the integration of various 2-D PLAs with different wavelength/ polarization-detection specifications.…”

Section: Introductionmentioning

confidence: 99%

Theoretical investigation of all-metal-based mushroom plasmonic metamaterial absorbers at infrared wavelengths

2015

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Abstract. High-performance wavelength-selective infrared (IR) sensors require small pixel structures, a lowthermal mass, and operation in the middle-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) regions for multicolor IR imaging. All-metal-based mushroom plasmonic metamaterial absorbers (MPMAs) were investigated theoretically and were designed to enhance the performance of wavelength-selective uncooled IR sensors. All components of the MPMAs are based on thin layers of metals such as Au without oxide insulators for increased absorption. The absorption properties of the MPMAs were investigated by rigorous coupled-wave analysis. Strong wavelength-selective absorption is realized over a wide range of MWIR and LWIR wavelengths by the plasmonic resonance of the micropatch and the narrow-gap resonance, without disturbance from the intrinsic absorption of oxide insulators. The absorption wavelength is defined mainly by the micropatch size and is longer than its period. The metal post width has less impact on the absorption properties and can maintain single-mode operation. Through-holes can be formed on the plate area to reduce the thermal mass. A small pixel size with reduced thermal mass and wideband single-mode operation can be realized using all-metal-based MPMAs.

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Midwave thermal infrared detection using semiconductor selective absorption

Cited by 11 publications

References 9 publications

Uncooled Mid-wave Infrared Focal Plane Array Using Band Gap Engineered Mercury Cadmium Telluride Quantum Dot Coated Silicon ROIC

Uncooled Mid-wave Infrared Focal Plane Array Using Band Gap Engineered Mercury Cadmium Telluride Quantum Dot Coated Silicon ROIC

Multi-color imaging with silicon-on-insulator diode uncooled infrared focal plane array using through-hole plasmonic metamaterial absorbers

Theoretical investigation of all-metal-based mushroom plasmonic metamaterial absorbers at infrared wavelengths

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