We present a CMOS Charge Sensitive Amplifier\ud
(CSA) specifically designed for low capacitance pixel or silicon\ud
drift detectors for high resolution X-ray spectrometry. The\ud
intrinsic noise of the CSA has been measured at different\ud
operating temperatures with a triangular shaping with peaking\ud
time from 0.8 μs to 102 μs. At room temperature, the intrinsic\ud
Equivalent Noise Charge (ENC) shows a minimum of 1.18 e-\ud
r.m.s. and at -30°C a minimum ENC of 0.89 e- r.m.s. has been\ud
measured, corresponding to a line width of 7.8 eV FWHM for a\ud
Silicon detector