Minority carrier lifetime and diffusion length in Si1−x−yGexCy heterolayers

Physical understanding and technological control of carrier lifetimes in semiconductor materials and devices: A critique of conceptual development, state of the art and applications

“…Carrier lifetime is a useful index of the quality of heterostructures because any defects produced by interlattice strains caused by mismatching of layers change the lifetime [172][173][174][175][176][177]. So the degree of deterioration is readily evident from the lifetime measurements.…”

Effect of damage removal etch (DRE) on plasma textured, multi-crystalline solar cells

“…Since the diffusion length is directly proportional to the carrier lifetime we can conclude that improvement in lifetime of the carriers results in improved electrical performance of solar cells [11][12][13]. With increase in diffusion length in a device the generation life time increases as per the relation, L d ¼ ½lð kT q Þt g 1=2 [14], where, L d is the diffusion length and t g is the generation lifetime. Thus, an increase of generation life time causes the enhancement of efficiency of the solar cell from 13.7% for the non-DRE cells to 15.1% for the DRE cells.…”

SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system

“…The carrier lifetime of the passivation layer deposited with a 100-W Si target power was 8.9 μs. Samnanta et al reported that impurity in the semiconductor can degrade the lifetime by the creation of an electrical defect center or crystal imperfection [14]. Therefore, a carbon-rich thin layer can have more microdefects than a Si-rich film.…”