Minority Carrier Lifetime of GaAs on Silicon

Ahrenkiel, R. K.; Al‐Jassim, Mowafak; Keyes, B. M.; Dunlavy, D. J.; Jones, K. M.; Vernon, S. M.; Dixon, T.M.

doi:10.1149/1.2086595

Cited by 46 publications

(15 citation statements)

References 12 publications

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“…A similarly strong effect of growth temperature on s mc has been reported for planar GaAs/Al x Ga 1Àx As double heterostructures. 13,23 This result clearly shows the positive correlation between increased shell growth temperature and s mc of the NWs.…”

Section: A)mentioning

confidence: 63%

Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1−xAs core-shell nanowires

Jiang

Parkinson

Gao

et al. 2012

Applied Physics Letters

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Charge recombination in disordered neat polymer films under imbalanced excitation conditions studied using the recombination time of flight technique J. Appl. Phys. 111, 104510 (2012) Dual roles of doping and trapping of semiconductor defect levels and their ramification to thin film photovoltaics J. Appl. Phys. 111, 104509 (2012) Ultrafast carrier response of Br+-irradiated In0.53Ga0.47As excited at telecommunication wavelengths J. Appl. Phys. 111, 093721 (2012) Electron traps in amorphous In-Ga-Zn-O thin films studied by isothermal capacitance transient spectroscopy

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Section: A)mentioning

confidence: 63%

Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1−xAs core-shell nanowires

Jiang

Parkinson

Gao

et al. 2012

Applied Physics Letters

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“…Figure 2 shows the average dislocation spacing, plotted as a function of TDD following Equation ( 1), along with a plot of the expected dependence of minority-carrier hole diffusion length on TDD for n-type GaAs doped at 1 Â 10 17 cm À3 . The diffusion length dependence was calculated from Equations (2)(3)(4). For the latter, a value for the non-dislocation-limited lifetime po for minority carrier holes of 20 ns was used, based on time-resolved photoluminescence studies on n ¼ 1 Â 10 17 cm À3 GaAs grown on Ge substrate wafers at 300 K, for which dislocation density was not a factor.…”

Section: Role Of Dislocation Density On Gaas/ge/sige/si Cell Propertiesmentioning

confidence: 99%

“…Each has been successful in reducing threading dislocation densities in the III-V overlayers from $10 9 -10 10 cm À2 for direct GaAs-on-Si epitaxy, to the 10 7 cm À2 range. [3][4][5][6][7][8] While impressive, this dislocation density still limits the minority-carrier lifetime in GaAs to 1-4 ns, even after post-growth defect passivation treatments via hydrogenation. 7,8 These values are not high enough to yield high-efficiency III-V cells, and those cells that have been fabricated suffer from low open-circuit voltages, typically of the order of 900 mV or lower under AM0 conditions for single-junction GaAs, providing an ultimate limit on cell efficiency.…”

Section: Introductionmentioning

confidence: 99%

Single‐junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers

Ringel

Carlin

Andre

et al. 2002

Progress in Photovoltaics

127

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Single junction InGaP/GaAs solar cells displaying high efficiency and record high open‐circuit voltage values have been grown by metal–organic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open‐circuit voltages of 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge‐related sub‐cell photoresponse. AM0 efficiencies close to 16% have been measured for a large number of small‐area cells, the performance of which is limited by non‐fundamental current losses due to significant surface reflection resulting from> 10% front‐surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 ns minority‐carrier lifetime that results from complete elimination of anti‐phase domains, and maintaining a threading dislocation density of ∼8 × 105 cm−2, 19–20% AM0 single‐junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger‐area cells, with identical open‐circuit voltages and higher short‐circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large‐area scaling is possible in the near term. Comparison with a simple model indicates that the voltage output of these GaAs‐on‐Si cells follows the ideal behavior expected for lattice‐mismatched devices, demonstrating that unaccounted‐for defects and issues that have plagued other methods to epitaxially integrate III–V cells with Si are resolved by using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high‐efficiency, lightweight and strong III–V solar cells. Copyright © 2002 John Wiley & Sons, Ltd.

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“…The ions produced by an ECR plasma have energies of 10 to 25 eV at pressures in the 10" to torr range which is much less than the ion energies produced by an rfplasma. Further reduction of these ion energies is possible through substrate biasing.…”

Section: Electron Cyclotron Resonance (Ecr) Plasma Sourcementioning

confidence: 94%

“…Figure 6. 10 shows the results of Cyasorb W531 concentration (wt%) and gel content (%). After THF extraction, W absorption measurements were made for the virgin cured, clear EVA stored in the dark for six years, and various degraded EVA films.…”

Section: Characterization Of Degraded Evamentioning

confidence: 99%

FY 1990 Applied Sciences Branch annual report

Keyes¹,

Dippo

1991

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V l l l (AES); scanning Auger microscopy (SAM); X-ray photoelectron spectroscopy (XPS); electron energy loss spectroscopy (EELS); electron-stimulated desorption spectroscopy (ESD); electron-beam-induced current and voltage (EBIC and EBIV) ; Auger voltage contrast (AVC) : high-resolution elemental and ionic mapping, including volume-indexing; cooperative soft x-ray synchrotron-source analysis; scanning tunneling microscopy (STM) ; and molecular beam epitaxy (MBE). Materials CharacterizationThis group employs advanced microscopy and microanalytical techniques in the determination of crystallographic, defect topographic, compositional, and microelectrical properties of photovoltaic materials and devices. These include electron probe microanalysis (EPMA) with energy dispersive and wavelength dispersive spectroscopy (EDS and WDS) : scanning electron microscopy (SEM) to liquid helium temperatures; scanning transmission electron microscopy (TEM and STEM); voltage contrast; electron-beaminduced current and voltage characterization: electron diffraction: electron channeling; image analysis; X-ray diffraction; X-ray fluorescence; microcathodoluminescence; cooperative high-resolution interface analysis using high-voltage electron microscopy: and complete sample preparation facilities, including ion etching with integral SIMS analysis. Device DevelopmentThis group provides modeling and fabrication support for the development of cell structures, including; diagnostic device preparation, optical conducting film fabrication and studies, thin-film and space cells, and computer analysis and design. Capabilities include; precision sputtering equipment for deposition of optical films, antireflection coatings, metallizations, transparent conductors, etc. ; research clean room facilities; III-V cell processing capabilities; photolithography and mask design and fabrication; InP-alloy metal-organic chemical vapor deposition (MOCVD) ; optical and electrical characterization for films and coatings: plasma deposition; photoconductivity, and ellipsometry; contact resistance determinations: and computer modeling programs for optical coatings and solar cell design. 1.2.4Electro-Optical Characterization The work of this group involves determination of the electrical and optical properties of materials and solar cells; and laser spectroscopies, including photoluminescence and specialized determinations of minority-carrier properties. Capabilities and techniques include capacitance-voltage, conductance-voltage, and temperature dependences; Hall effect/van der Pauw measurements; laser scanning: deep-level transient spectroscopy I 4 I 2.8 SURFACE AND INTERFACE ANALYSIS 2.1 RESEARCH STAFF

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Minority Carrier Lifetime of GaAs on Silicon

Cited by 46 publications

References 12 publications

Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1−xAs core-shell nanowires

Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1−xAs core-shell nanowires

Single‐junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers

FY 1990 Applied Sciences Branch annual report

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