Misfit dislocation free InAs/GaSb core–shell nanowires grown by molecular beam epitaxy

Abstract

In this report, we present the growth and structural analyses of broken gap InAs/GaSb core-shell nanowires by molecular beam epitaxy using an Au-free approach. Depending on the shell growth temperature, two distinct growth regimes for the GaSb shells are identified resulting in conformal or tapered shells. Morphological analyses reveal a dodecagonal nanowire cross-section after GaSb shell growth. Detailed transmission electron microscope investigations from different zone axes confirm that the small lattice mismatch of 0.6% allows the deposition of 40 nm thick GaSb shells free of misfit dislocations. Additionally, an abrupt interface from InAs to GaSb is found. These nanowires are suitable for future devices such as TFETs.

MBE growth of self-assisted InAs nanowires on graphene

“…Self-assisted InAs NWs typically grow with quite prominent [011] facets [18]. The side facets affect the chemical and electronic properties of the NWs surface and are thus important for in-situ metallization [19] and in-situ shell growth [20]. Unfortunately, self-assisted growth on Si/SiO 2 normally results in InAs NWs having mixed zinc blende (ZB) / wurtzite (WZ) structure with prominent rotational defects along the growth direction and a typically low aspect ratio [18,21].…”

Equilibrium positions of misfit dislocations in a nanolayer embedded in a matrix

“…In this A C C E P T E D M A N U S C R I P T framework, the formation of dislocations in axi-symmetrical composite structures has been intensively studied because of the numerous applications of such nanostructures in nano-electronics and optics [7,8,9]. The introduction of prismatic dislocation loops in the interface between a cylindrical precipitate embedded in a finite-size matrix has been for example investigated from a static energy variation calculation and the critical thickness of the inner cylinder has been determined versus the misfit strain [10].…”

Hierarchical α‐MnO2 Tube‐on‐Tube Arrays with Superior, Structure‐Dependent Pseudocapacitor Performance Synthesized via a Selective Dissolution and Coherent Growth Mechanism

“…[ 26,28 ] Along this line of thought, an approach with more growth regulations is expected to achieve highly ordered and robust hierarchical nanoarrays. Coherent growth, which requires both interfacial compatibility and crystallographic orientation relationships, [ 29,30 ] is probably utilized to precisely assemble nanobuilding blocks into hierarchical nanoarrays. For instance, the quasi-periodic sub-structure in triwing bismuth telluride nanoribbons, induced by coherent growth, has been demonstrated recently.…”