Mixed phase silicon thin films grown at high rate using 60 MHz assisted VHF-PECVD technique

Juneja, Sandeep; Sudhakar, S.; Gope, Jhuma; Kumar, Sushil

doi:10.1016/j.mssp.2015.06.046

Cited by 14 publications

(4 citation statements)

References 54 publications

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“…One of the ways to judge the electrical of the photoelectric thin film is to measure the photocurrent and dark current [35]. The Iphoto/Idark electrical properties depend on the crystallinity and grain size of the mixed-phase [36]. Appropriately increasing the crystallinity will increase the stability of the nc-Si:H thin film and reduce the occurrence of light-induced degradation [20].…”

Section: Results and Discussion A Characteristics Of The Prepared Nc-...mentioning

confidence: 99%

High-Quality Nanocrystalline Silicon (nc-Si:H) Thin Film With Mixed-Phase and Its Application of Circulating Tumor Cell DEP Biochip

Lin

et al. 2023

IEEE Access

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This paper proposes the light-induced dielectrophoresis (DEP) biochip prepared by 40.68-MHz very high-frequency plasma-enhanced chemical vapor deposition (VHFPECVD) and post-microwave annealing treatment. The biochip can screen circulating tumor cells without using any antibodies and biomarkers. Therefore, the biochip's high efficiency and high purity are goals for effectively conducting the whole genome sequencing (WGS) analysis. The quality, uniformity, and electrical properties of the prepared silicon thin films affect the performance parameters of the biochip. High-quality nanocrystalline silicon (nc-Si:H) thin film is the core technology in the biochip. High-density nc-Si:H thin films can be well prepared using 40.68 MHz VHFPECVD and post-treatment microwave annealing. Microwave annealing improves the crystallinity and reduces the defects in the nc-Si:H thin films discovered by Fourier-transform infrared spectroscopy (FTIR). The prepared thin film with a crystallinity of 5% enhanced 38.3%, surface roughness of 10.93 nm, and a photo/dark current of 7.1×10 3 with a power density of 60mW/cm 2 was obtained. The biochip showed a recovery rate of 81.3%, purity of 78.6%, and survival rate of 91% for applying to the circulating tumor cells (CTCs).INDEX TERMS LIDEP biochip, Light-induced dielectrophoresis, Nano-crystallite silicon thin film.

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Section: Results and Discussion A Characteristics Of The Prepared Nc-...mentioning

confidence: 99%

High-Quality Nanocrystalline Silicon (nc-Si:H) Thin Film With Mixed-Phase and Its Application of Circulating Tumor Cell DEP Biochip

Lin

et al. 2023

IEEE Access

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“…With microwave annealing, the increase in nanoclusters led to a reduction in the optical bandgap in all cases. Many studies have shown that the influence of the mixed phase on the optical bandgap is related to the size ratio and nanoclusters of the amorphous phase to the nanocrystal phase [57][58][59]. Therefore, the quality of the film can be improved when the mixed-phase film, through microwave annealing, causes the amorphous phase to begin to produce the nanocrystal phase.…”

Section: Resultsmentioning

confidence: 99%

Effects of Chamber Pressures on the Passivation Layer of Hydrogenated Nano-Crystalline Silicon Mixed-Phase Thin Film by Using Microwave Annealing

Lin

Tien

et al. 2021

Electronics

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This paper proposes the effects of chamber pressures on the passivation layer of hydrogenated nano-crystalline silicon (nc-Si:H) mixed-phase thin film using microwave annealing (MWA) to achieve a high-quality thin film. The use of 40.68 MHz very-high-frequency plasma-enhanced chemical vapor deposition (VHFPECVD) deposited the nc-Si:H mixed-phase thin film on the top and bottom of the n-type crystalline silicon substrate. The chamber pressures (0.2, 0.4, 0.6, and 0.8 Torr) of the VHFPECVD were critical factors in controlling the carrier lifetime of the symmetric structure. By using the VHFPECVD to deposit the nc-Si:H and using the MWA to enhance the quality of the symmetric structure, the deposited nc-Si:H’s properties of a crystalline volume fraction of 29.6%, an optical bandgap of 1.744 eV, and a carrier lifetime of 2942.36 μs were well achieved, and could be valuable in thin-film solar-cell applications.

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“…The films were deposited on corning 7059 glass at a substrate temperature of 270 °C. Before the deposition process, proper cleaning of the substrates was adopted using standard procedures [13]. Chamber cleaning was also carried out by Ar flushing and Ar plasma to make the chamber environment suitable for deposition process by making it free of residual contaminants.…”

Section: Methodsmentioning

confidence: 99%

Employing constant photocurrent method for the study of defects in silicon thin films

2019

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Different optical characterization techniques have been performed on a series of microcrystalline silicon thin films deposited using very high-frequency-assisted plasma-enhanced chemical vapor deposition process. The constant photocurrent method has been employed to study the defects states in density of states spectra of hydrogenated microcrystalline silicon thin films. The photocurrent measurements demonstrate anisotropy in the optoelectronic properties of the material. We have analyzed the optical absorption coefficient from UV spectroscopy and with the help of constant photocurrent method. The spectra have been analyzed in broad region and are presented for both the cases, i.e., surface and bulk light scatterings. The spectra were interpreted in terms of disorder, resulting defect density, crystalline/amorphous volume fractions and material morphology. The subgap-related parameters such as absorption coefficient, characteristic energy E 0 of tail states and density of subgap defect states together with an estimate of the bandgap of silicon films prepared at various crystalline fractions have also been estimated. The density of localized tail states is found to fall exponentially toward the gap with band tail width of about 110 meV.

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Mixed phase silicon thin films grown at high rate using 60 MHz assisted VHF-PECVD technique

Cited by 14 publications

References 54 publications

High-Quality Nanocrystalline Silicon (nc-Si:H) Thin Film With Mixed-Phase and Its Application of Circulating Tumor Cell DEP Biochip

High-Quality Nanocrystalline Silicon (nc-Si:H) Thin Film With Mixed-Phase and Its Application of Circulating Tumor Cell DEP Biochip

Effects of Chamber Pressures on the Passivation Layer of Hydrogenated Nano-Crystalline Silicon Mixed-Phase Thin Film by Using Microwave Annealing

Employing constant photocurrent method for the study of defects in silicon thin films

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