“…Furthermore, the contacts at the edges of the sample provide boundary conditions at which the CDW is pinned. A change of dimensions induced by strain requires a rearrangement of the CDW, which proceeds in a quantized fashion, leading to resistance steps as previously shown in K 0.3 MoO 3 ( 34 ), whereas the possible effect of strain on the commensurability was discussed in NbSe 3 ( 35 ). If we assume that the H state is qualitatively similar to the NC state with a distance of ~8 nm between domain walls, a strain of 0.2% over a distance of 1 to 10 μm between contacts introduces about one to two extra domain walls in each in-plane direction.…”