(
              Mn
              ,
           Sb) doped-Pb(Zr, Ti)O3 infrared detector arrays

Xu, Yuqing; Wu, N. J.; Ignatiev, A.

doi:10.1063/1.373769

Cited by 18 publications

(7 citation statements)

References 12 publications

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“…It was considered that the internal bias should have a strong relationship with the Mn-doping, which generally led to a hard doping effect. 15,16 For the substrate temperature between 480 and 530 • C, the replacement of Mn 2+ with B site (Mg 1/3 Nb 2/3 ) 4+ or Ti 4+ may play a dominant role. In order to maintain electrical neutrality, oxygen vacancies would appear in the crystal lattice, and form the complex defect dipole pair 𝑀𝑛 ′′ 𝑇𝑖 − 𝑉 ⋅⋅ 𝑜 .…”

Section: Resultsmentioning

confidence: 99%

High‐quality ternary relaxor ferroelectric thin films on Si substrates by pulsed laser deposition method

Wang

Zhang

et al. 2022

J Am Ceram Soc.

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In this work, ternary relaxor ferroelectric thin films 0.5mol% Mn‐doped 0.36Pb(In1/2Nb1/2)O3‐0.36Pb(Mg1/3Nb2/3)O3‐0.28PbTiO3 (Mn‐PIMNT) with high Curie point were grown on the Pt/Ti/SiO2/Si substrate with the addition of La0.6Sr0.4CoO3 (LSCO) as a buffer layer. The phase and domain structure, nanoscale piezoelectric response, and macroscopic ferroelectric, dielectric, pyroelectric properties of Mn‐PIMNT thin films were studied. Both the crystalline quality and the crystallographic orientation exhibited strong temperature dependence within the substrate temperature of 450–580°C. Under the optimized temperature of 530°C, the Mn‐PIMNT thin film exhibited excellent global electrical properties with remnant polarization Pr∼35.6 μC/cm2, coercive field Ec∼5.1 kV/mm, dielectric constant εr${\varepsilon _r}$∼3360, and relatively low dielectric loss tanδ∼0.03. It was further found that the pyroelectric coefficient of the Si‐substrated Mn‐PIMNT thin film reached 6.7 × 10−4 C/m2·K. The optimized ferroelectric thin films Mn‐PIMNT on Si substrate with excellent temperature stability show great potential in integrated microelectromechanical systems.

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Section: Resultsmentioning

confidence: 99%

High‐quality ternary relaxor ferroelectric thin films on Si substrates by pulsed laser deposition method

Wang

Zhang

et al. 2022

J Am Ceram Soc.

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“…In addition, compared with other metallic oxides such as LSCO, YBCO, SrRuO 3 , etc., it also has better metallic properties. [15][16][17] In our laboratory, the room temperature resistivity of the LaNiO 3 thin films has been reported down to 7.6ϫ10 Ϫ6 ⍀ m, which is suitably used as an electrode. 7 Based on these advantages, LaNiO 3 has been widely used as an electrode or buffer layer on various substrates such as Si, SiO 2 /Si, platinized silicon, SrTiO 3 , LaAlO 3 , quartz wafers, etc.…”

Section: Resultsmentioning

confidence: 99%

Ultraviolet-infrared optical properties of highly (100)-oriented LaNiO3 thin films on Pt–Ti–SiO2–Si wafer

Sun

Meng

et al. 2001

Journal of Applied Physics

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The optical constants of highly ͑100͒-oriented LaNiO 3 thin films on Pt͑111͒-Ti-SiO 2 -Si substrate derived by metalorganic deposition have been obtained using spectroscopic ellipsometry techniques in the wide wavelength range from ultraviolet to far infrared. In fitting the dielectric functions of LaNiO 3 , two harmonic oscillators are observed, one is believed to come from the valenceconduction interband transition and the other is attributed to the transition from a donor band to the conduction. Simultaneously the frequency of plasmon is also obtained, which results from the strong electron-electron interaction. Based on these optical and electrical properties, a promising application of LaNiO 3 thin films in infrared microsensors has been proposed.

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“…To develop high performance pyroelectric infrared detector, efforts have been made to improve the merit figures of the PZT thin films. The introduction of dopants, such as Mn, Sb, etc., into PZT has been demonstrated to be an effective way to improve the figures of merit of pyroelectric application [3,4]. It is also useful to stack together multiple coatings of different kinds of ferroelectric films, e.g.…”

Section: Introductionmentioning

confidence: 99%

Growth and electrical properties of compositionally graded Pb(ZrxTi1−x)O3 thin films on PbZrO3 buffered Pt/Ti/SiO2/Si substrates

Tang

Wang

Chan

et al. 2004

Journal of Crystal Growth

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( Mn , Sb) doped-Pb(Zr, Ti)O3 infrared detector arrays

Abstract: Articles you may be interested inSignificant enhancement of energy-storage performance of (Pb0.91La0.09)(Zr0.65Ti0.35)O3 relaxor ferroelectric thin films by Mn doping

Cited by 18 publications

References 12 publications

High‐quality ternary relaxor ferroelectric thin films on Si substrates by pulsed laser deposition method

High‐quality ternary relaxor ferroelectric thin films on Si substrates by pulsed laser deposition method

Ultraviolet-infrared optical properties of highly (100)-oriented LaNiO3 thin films on Pt–Ti–SiO2–Si wafer

Growth and electrical properties of compositionally graded Pb(ZrxTi1−x)O3 thin films on PbZrO3 buffered Pt/Ti/SiO2/Si substrates

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