MNOS Traps and Tailored Trap Distribution Gate Dielectric MNOS

We report for the first time on the stretched exponential time dependence of positive charge and spin generated by subband-gap ultraviolet illumination in gate-quality nitrogen-rich amorphous silicon nitride films. We have found that a stretched exponential function, which characterizes dispersive charge transport in silicon nitride, gives the best description of our experimental results. We also propose a mechanism which we believe is responsible for the creation of the positive charge and spin in the amorphous silicon nitride films.

show abstract

Stretched exponential illumination time dependence of positive charge and spin generation in amorphous silicon nitride

Kanicki

Sankaran

Gelatos

et al. 1990

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

Physical mechanism for orientation dependence of ferroelectric fatigue in Pb(Zn1∕3Nb2∕3)O3-5%PbTiO3 crystals

Lee

Hong

2004

Journal of Applied Physics

View full text Add to dashboard Cite

The underlying phenomenology of the crystallographic orientation dependence on ferroelectric fatigue behavior was investigated in rhombohedral Pb(Zn1∕3Nb2∕3)O3-5%PbTiO3 (PZN-5PT) crystals. It was recently found that an electric field (E field) application along the ⟨001⟩ direction of PZN-5PT crystal did not induce the fatigue to 105cycles of bipolar electric field cycling (switching), while the ferroelectric fatigue became evident from 103cycles of polarization switching along the ⟨111⟩ direction. In this study, the dependence of ferroelectric fatigue on the crystal orientation is explained by changes in internal stress, switching mechanisms, and domain configuration. The magnitude of the in-plane tensile strain was a maximum during a domain switching in ⟨111⟩ oriented crystals, resulting in the suppressed motion of domain boundaries in ⟨111⟩ oriented crystals. In addition to the stress, differences in domain switching mechanisms and domain boundary density for ⟨001⟩ and ⟨111⟩ oriented crystals contributed to the orientation dependence of ferroelectric fatigue. Sideways domain growth became dominant and domain width increased when the E field was applied along the ⟨111⟩ direction. Sideways domain growth of ⟨111⟩ oriented crystal swept oxygen vacancies of the domains during the consecutive switching process, leading to the effective accumulation of oxygen vacancies at the domain boundaries. Smaller domain boundary densities found in ⟨111⟩ oriented crystals, in comparison to ⟨100⟩ oriented crystals, also contributed to the increase in the density of accumulated oxygen vacancies at domain boundaries after sweeping oxygen vacancies of the domains, due to the impact of increased E-field cycling and cumulative switching. High in-plane tensile stress and a high concentration of oxygen vacancies at the domain boundaries due to sideways growth and small domain boundary density were suggested to pin the movement of domain boundaries and enhance the fatigue in ⟨111⟩ oriented crystals.

show abstract

Empirical study of the metal-nitride-oxide-semiconductor device characteristics deduced from a microscopic model of memory traps

Ngai

Hsia

1982

Applied Physics Letters

View full text Add to dashboard Cite

A graded-nitride gate dielectric metal-nitride-oxide-semiconductor (MNOS) memory transistor exhibiting superior device characteristics is presented and analyzed based on a qualitative microscopic model of the memory traps. The model is further reviewed to interpret some generic properties of the MNOS memory transistors including memory window, erase-write speed, and the retention-endurance characteristic features.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

MNOS Traps and Tailored Trap Distribution Gate Dielectric MNOS

Cited by 6 publications

References 0 publications

Stretched exponential illumination time dependence of positive charge and spin generation in amorphous silicon nitride

Stretched exponential illumination time dependence of positive charge and spin generation in amorphous silicon nitride

Physical mechanism for orientation dependence of ferroelectric fatigue in Pb(Zn1∕3Nb2∕3)O3-5%PbTiO3 crystals

Empirical study of the metal-nitride-oxide-semiconductor device characteristics deduced from a microscopic model of memory traps

Contact Info

Product

Resources

About