A graded-nitride gate dielectric metal-nitride-oxide-semiconductor (MNOS) memory transistor exhibiting superior device characteristics is presented and analyzed based on a qualitative microscopic model of the memory traps. The model is further reviewed to interpret some generic properties of the MNOS memory transistors including memory window, erase-write speed, and the retention-endurance characteristic features.
Based on an in-situ electrical alterable nonvolatile semiconductor memory, the MNOS transistor, an adaptive interconnect is developed to implement wafer-scale integration. Experimental validation of the interconnect is reported. The interconnect concept is further extended to the design of semiconductor mass memory and the design of an adaptive voter to implement fault tolerant systems.
The photoluminescence (PL) properties of CuBr and CuBr/AgBr semiconductor nanocrystals (NCs) embedded in borosilicate glasses are measured under band‐to‐band excitation by a 355‐nm Nd YAG laser. We observed emission from CuBr (peaked at 520 nm) doped glass, which is associated with deep states in CuBr NCs. We also observed the sensitized blue to orange‐red emission in CuBr/AgBr‐glass systems (peaked at 520 and 570 nm), in which the luminescence intensity of CuBr decreases with increasing AgBr concentrations, while it is enhanced significantly around 570 nm. The results are discussed by the possible energy transfer between them, or by the multi‐exitonic recombination process which ejects an excited carrier from CuBr to AgBr NCs.
Results obtained from the study of the incremental conductance of metal to heavily doped n-type Si barrier tunneling as a function of bias voltage are presented. The Si is variously doped with P, As, and Sb. Experimental data indicate that the location of Fermi level is strongly dependent on dopant types.
A microscopic model of the memory traps has been developed that is consistent with the known properties of the MNOS devices. In this model, the memory traps are attributed to the silicon dangling bonds in the silicon nitride. The resultant trap center is amphoteric in nature, possessing either a positively or a negatively charged state. The dangling bond model is applied towards the interpretation of MNOS properties, including retention and endurance.
In addition, the model was used to explain and further develop the tailored-trap-distribution gate-dielectric MNOS memory transistor.
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