Mobility enhancement in strained p-InGaSb quantum wells

Bennett, B. R.; Ancona, Mario G.; Boos, J.B.; Shanabrook, B. V.

doi:10.1063/1.2762279

Cited by 99 publications

(81 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Laikhtman et al 7 presented a modeling study of the InGaAs/AlGaAs system with the objective of discussing the critical parameters influencing hole transport. More recently, Bennett et al demonstrated the use of biaxial strain in In x Ga 1-x Sb 8 & GaSb 9 channels to enhance the hole mobility and obtained hole mobilities of greater than 1000cm 2 /Vs at a sheet charge of 1×10 12 /cm 2 . The key concept behind these schemes for enhancing hole mobility is demonstrated in Figure 1, where a narrow bandgap material is inserted between the wide bandgap layers creating a quantum well for the confined holes.…”

Section: Introductionmentioning

confidence: 99%

Enhancing hole mobility in III-V semiconductors

Nainani

Bennett

Boos

et al. 2012

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Transistors based on III-V semiconductor materials have been used for a variety of analog and high frequency applications driven by the high electron mobilities in III-V materials. On the other hand, the hole mobility in III-V materials has always lagged compared to group-IV semiconductors such as silicon and germanium. In this paper we explore the used of strain and heterostructure design guided by bandstructure modeling to enhance the hole mobility in III-V materials. Parameters such as strain, valence band offset, effective masses and splitting between the light and heavy hole bands that are important for optimizing hole transport are measured quantitatively using various experimental techniques. A peak Hall mobility for the holes of 960cm 2 /Vs is demonstrated and the high hole mobility is maintained even at high sheet charge.

show abstract

Section: Introductionmentioning

confidence: 99%

Enhancing hole mobility in III-V semiconductors

Nainani

Bennett

Boos

et al. 2012

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

show abstract

“…The HFETs are fabricated using alloyed source/drain ohmic contacts and a Schottky-barrier gate. The growth details of this structure are given in [10]. The device has a source-drain spacing of 3 μm, a gate length of 0.2 μm, and a gate width of 150 μm.…”

Section: Methodsmentioning

confidence: 99%

Ion-induced charge-collection transients in p-channel AlGaSb/InGaSb field-effect transistors

Warner

McMorrow

Büchner

et al. 2013

2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

Self Cite

View full text Add to dashboard Cite

Abstract-The first ion-induced, time-resolved chargecollection measurements for p-channel AlGaSb/InGaSb fieldeffect transistors are reported. The transient response reveals two distinct decay regions; a fast initial decay (< 1 ns) followed by a slower decay (> 10 ns). The slow decay is associated with charge enhancement processes, which are explained by electron trapping and de-trapping via deep-level traps located in the AlGaSb barrier material. Charge enhancement effects are reported for different drain and gate bias conditions, and it is found that charge-enhancement effects are suppressed when the gate bias is increased toward depletion. The effects of the bias on the transient response are presented and discussed.

show abstract

“…[19][20][21] The biaxial strain in the QWs was previously optimized at 1.8% on GaAs substrates to maximize the hole mobility, 21 and the similar composition of QWs was maintained on the Si substrates.…”

Section: à3mentioning

confidence: 99%

Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties

Madisetti¹,

Tokranov²,

Greene³

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

A study of heteroepitaxial molecular beam epitaxy growth of strained p-channel InGaSb quantum well (QW) on lattice mismatched Si (100) using Al(Ga)Sb metamorphic buffers is presented in this paper. The migration enhanced epitaxy (MEE) technique was employed for AlSb nucleation layer (NL) on Si and analyzed using atomic force microscopy and in-situ Auger electron spectroscopy techniques to optimize growth conditions for continuous 2D buffer layers and improve surface quality of subsequent layers. Growth-related defects (threading dislocations, microtwins, and antiphase boundaries) and their effect on surface morphology and electrical properties of the QWs are analyzed with scanning electron microscope and transmission electron microscopy and correlated to the NL properties. The baseline data for defect density in the layers and resultant surface morphology are presented. Room temperature p-channel Hall mobility of 660 cm 2

show abstract

Mobility enhancement in strained p-InGaSb quantum wells

Cited by 99 publications

References 14 publications

Enhancing hole mobility in III-V semiconductors

Enhancing hole mobility in III-V semiconductors

Ion-induced charge-collection transients in p-channel AlGaSb/InGaSb field-effect transistors

Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties

Contact Info

Product

Resources

About