Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism

Medina-Bailón, Cristina; Sadi, Toufik; Nedjalkov, Mihail; Carrillo-Nuñez, Hamilton; Lee, Jae-Hyun; Badami, Oves; Georgiev, Vihar P.; Selberherr, S.; Asenov, A.

doi:10.1109/led.2019.2934349

Cited by 17 publications

(15 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The differences in the drain current as a function of the Ge mole fraction in comparison to the pure Si NWT are less pronounced for the elliptic NWT shape (Figure 4c) than for the other NWT shapes (Figure 4a,b). Moreover, it is worth highlighting that the I DS vs. V GS characteristics for the elliptic NWTs (Figure 4c) reveal a higher I ON /I OFF ratio, which is another factor that shows its superior performance in comparison to circular and square NWT shapes [33] (Figure 4a,b, respectively)." Quantum confinement effects modify the electron distribution, determining the charge available for transport [60,61] and, consequently, the electrostatic potential profile [62].…”

Section: Nanowire Transistorsmentioning

confidence: 95%

“…The Kubo-Greenwood (KG) module provides accurate electron mobility at low-field near-equilibrium conditions [31][32][33]. It combines the quantum effects based on the 1D multi-subband scattering rates of the most relevant scattering mechanisms (acoustic and optical phonon, and surface roughness scattering mechanisms) in confined channels [34] and the semi-classical Boltzmann Transport Equation by applying the KG formula within the relaxation time approximation [35].…”

Section: Overview Of Nessmentioning

confidence: 99%

See 1 more Smart Citation

Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

et al. 2021

Self Cite

View full text Add to dashboard Cite

The modeling of nano-electronic devices is a cost-effective approach for optimizing the semiconductor device performance and for guiding the fabrication technology. In this paper, we present the capabilities of the new flexible multi-scale nano TCAD simulation software called Nano-Electronic Simulation Software (NESS). NESS is designed to study the charge transport in contemporary and novel ultra-scaled semiconductor devices. In order to simulate the charge transport in such ultra-scaled devices with complex architectures and design, we have developed numerous simulation modules based on various simulation approaches. Currently, NESS contains a drift-diffusion, Kubo–Greenwood, and non-equilibrium Green’s function (NEGF) modules. All modules are numerical solvers which are implemented in the C++ programming language, and all of them are linked and solved self-consistently with the Poisson equation. Here, we have deployed some of those modules to showcase the capabilities of NESS to simulate advanced nano-scale semiconductor devices. The devices simulated in this paper are chosen to represent the current state-of-the-art and future technologies where quantum mechanical effects play an important role. Our examples include ultra-scaled nanowire transistors, tunnel transistors, resonant tunneling diodes, and negative capacitance transistors. Our results show that NESS is a robust, fast, and reliable simulation platform which can accurately predict and describe the underlying physics in novel ultra-scaled electronic devices.

show abstract

Section: Nanowire Transistorsmentioning

confidence: 95%

Section: Overview Of Nessmentioning

confidence: 99%

Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

et al. 2021

Self Cite

View full text Add to dashboard Cite

show abstract

“…Electron transport can be modelled using a quantum transport model (based on a non-equilibrium Green's function solver capable of accounting for ballistic, phonon and surface roughness scattering) and a classical transport model based on a drift-diffusion solver with different mobility models such as Yamaguchi, Caughey-Thomas and Masetti) module [19]. A Kubo-Greenwood solver allows the accurate calculation of the low field mobility due to the most relevant scattering mechanism including acoustic and optical phonon, and surface roughness scattering [20], [21]. This calculated mobility can be employed in the drift-diffusion solver for a more accurate performance prediction of the MOSFETs.…”

Section: Simulation Framework a Nano-electronic Simulation Software -...mentioning

confidence: 99%

A Kinetic Monte Carlo Study of Retention Time in a POM Molecule-Based Flash Memory

Badami

Sadi

Adamu-Lema

et al. 2020

IEEE Trans. Nanotechnology

Self Cite

View full text Add to dashboard Cite

The modelling of conventional and novel memory devices has gained significant traction in recent years. This is primarily because the need to store an increasingly larger amount of data demands a better understanding of the working of the novel memory devices, to enable faster development of the future technology generations. Furthermore, in-memory computing is also of great interest from the computational perspectives, to overcome the data transfer bottleneck that is prevalent in the von-Neumann architecture. These important factors necessitate the development of comprehensive TCAD simulation tools that can be used for modeling carrier dynamics in the gate oxides of the flash memory cells. In this work, we introduce the kinetic Monte Carlo module that we have developed and integrated within the Nano Electronic Simulation Software (NESS) -to model electronic charge transport in Flash memory type structures. Using the developed module, we perform retention time analysis for a polyoxometalate (POM) molecule-based charge trap flash memory. Our simulation study highlights that retention characteristics for the POM molecules have a unique feature that depends on the properties of the tunneling oxide.

show abstract

“…FinFETs] [4]. Within this dynamic context of nanoscale device development, gate-all-around (GAA) nanowire transistors (NWTs) are gaining considerable interest [5][6][7][8][9][10][11], as an extension of the FinFET CMOS technology to the ultimate scaling limit. Advantages of GAA NWTs are numerous, for instance: minimized short channel effects or the possibility of using strain and material engineering to improve device performance.…”

Section: Introductionmentioning

confidence: 99%

Comprehensive mobility study of silicon nanowire transistors using multi-subband models

et al. 2023

Self Cite

View full text Add to dashboard Cite

Spatial confinement is important in advanced More Moore devices, such as nanowire transistors (NWTs), where the basic charge transport properties must be revised beyond the bulk crystal assumptions. This work presents a comprehensive and general overview of the electron mobility in aggressively-scaled Si NWTs in order to demonstrate the effect of quantum confinement on this topic, establishing its dependence on numerous physical factors (shape, diameter, and orientation). The mobility evaluation makes use of a unique simulation framework and innovative multi-subband calculations of the scattering rates. We show that 1) the effect of surface roughness scattering is more pronounced at higher sheet densities, 2) ionized impurity scattering seriously degrades the mobility in highly-doped NWTs, and 3) the cross-section shape affects directly the subband parameters and the mobility, with the elliptical NWTs giving the best performance for the same cross-sectional area.

show abstract

Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism

Cited by 17 publications

References 28 publications

Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

A Kinetic Monte Carlo Study of Retention Time in a POM Molecule-Based Flash Memory

Comprehensive mobility study of silicon nanowire transistors using multi-subband models

Contact Info

Product

Resources

About