MOCVD growth and structural characterization of In–Sb–Te nanowires

Abstract

In this work, the self-assembly of In 3 Sb 1 Te 2 and In-doped Sb 4 Te 1 nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, coupled with vapor-liquid-solid (VLS) mechanism, catalyzed by Au nanoparticles. Single crystal In 3 Sb 1 Te 2 and In-doped Sb 4 Te 1 NWs were obtained for different reactor pressures at 325 8C. The parameters influencing the NW selfassembly were studied and the compositional, morphological, and structural analysis of the grown structures was performed, also comparing the effect of the used substrate (crystalline Si and SiO 2 ). In both cases, NWs of several micrometer in length and with diameters as small as 15 nm were obtained.

Epitaxial and large area Sb2Te3thin films on silicon by MOCVD

“…Chalcogenide structures, such as two-dimensional layered materials, 1 thin lms, [2][3][4] and nanowires, [5][6][7] recently have become technologically relevant materials in the context of memory devices and spintronics. 8 In particular, the semiconductor antimony telluride (Sb 2 Te 3 ) has been exploited in phase change memory cells, taking advantage of its reversible amorphous-to-crystalline transition, 9,10 as a thermoelectric material, [11][12][13] and more recently as a topological insulator (TI), 14,15 since it has been demonstrated, despite its insulating bulk, to possess surface Dirac cones and conductive edge states.…”

High‐Density Sb2Te3 Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growth

“…On the other hand, these types of synthesis have in most cases been performed on planar, unpatterned substrates, therefore leading to a random distribution of the NWs. [21][22][23][24][25] The growth of ordered arrays of nanocrystals of different chalcogenide alloys, including Sb 2 Te 3 , by selective MOCVD growth has been demonstrated on low aspect-ratio lithographically patterned (≈100 nm size) templates and on substrates locally treated by oxygen plasma, as well as using Au nanodeposits as catalyzers exploiting the vaporliquid-solid mechanism. [26][27][28][29][30][31] For what concerns high-aspectratio chalcogenide nanostructures, the growth of Te-rich Sb 2 Te 3 NWs exploiting the vapor-solid mechanism on substrates patterned with pores of diameter ≈50 nm and height ≈100 nm has been explored.…”

“…Indeed, CVD and, in particular, metal organic chemical vapor deposition (MOCVD) processes allow the bottom‐up growth of nanostructures and NWs of a wide range of chalcogenide alloys with often single‐crystal quality, which is often out of the reach for other methods. On the other hand, these types of synthesis have in most cases been performed on planar, unpatterned substrates, therefore leading to a random distribution of the NWs . The growth of ordered arrays of nanocrystals of different chalcogenide alloys, including Sb 2 Te 3 , by selective MOCVD growth has been demonstrated on low aspect‐ratio lithographically patterned (≈100 nm size) templates and on substrates locally treated by oxygen plasma, as well as using Au nanodeposits as catalyzers exploiting the vapor–liquid–solid mechanism .…”

Atomistic Simulations of the Crystallization and Aging of GeTe Nanowires

“…Ultrathin InSbTe NWs with diameters smaller than 15 nm were also synthesized recently by metal−organic chemical vapor deposition (MOCVD). 25 Moreover, core−shell NWs made of two materials with different melting/crystallization temperatures were shown to provide a suitable realization of a multibit cell. 26,27 The reset current decreases with the NW size because of the reduction of the cross-sectional area, heat and electric current confinement effects, 8 and the reduction of the melting temperature with decreasing NW thickness.…”