We report on the fabrication and electrical characterization of phase change memory (PCM) devices formed by In3Sb1Te2 chalcogenide nanowires (NWs), with diameters as small as 20 nm. The NWs were self-assembled by metal organic chemical vapor deposition via the vapor–liquid–solid method, catalyzed by Au nanoparticles. Reversible and well reproducible memory switching of the NWs between low and high resistance states was demonstrated. The conduction mechanism of the high resistance state was investigated according to a trap-limited model for electrical transport in the amorphous phase. The size of the amorphized portion of the NW and the critical electric field for the transition to the low resistance state were evaluated. The In3Sb1Te2 NW-based devices showed very low working parameters, such as RESET voltage (∼3 V), current (∼40 μA), and power (∼130 μW). Our results indicated that the studied NWs are suitable candidates for the realization of ultra-scaled, high performance PCM devices.

In this work, the self-assembly of In 3 Sb 1 Te 2 and In-doped Sb 4 Te 1 nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, coupled with vapor-liquid-solid (VLS) mechanism, catalyzed by Au nanoparticles. Single crystal In 3 Sb 1 Te 2 and In-doped Sb 4 Te 1 NWs were obtained for different reactor pressures at 325 8C. The parameters influencing the NW selfassembly were studied and the compositional, morphological, and structural analysis of the grown structures was performed, also comparing the effect of the used substrate (crystalline Si and SiO 2 ). In both cases, NWs of several micrometer in length and with diameters as small as 15 nm were obtained.

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The thermal resistance along the thickness of In3SbTe2 crystalline nanowires was measured using the scanning thermal microscopy in 3ω mode. The nanowires were grown by metal organic vapor deposition, exploiting the VLS mechanism induced by Au metal‐catalyst nanoparticles and harvested on a SiO2/Si substrate. Two nanowires with different thickness (13 and 23 nm) were investigated. The thermal resistance of the nanowires was determined using two different approaches; the first one exploits the experimental data, whereas the second one is more sophisticated, since it involves a minimization procedure. Both methods led to comparable values of the thermal resistance along the transverse direction (thickness) of the nanowire. The obtained results were explained starting from the mean free path of phonons calculated in the In3SbTe2 bulk.

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