MOCVD growth and thermal analysis of Sb<inf>2</inf>Te<inf>3</inf> thin films and nanowires

Effect of Substrates and Thermal Treatments on Metalorganic Chemical Vapor Deposition-Grown Sb2Te3Thin Films

“…The chemical reactivity of SbCl 3 and Te(SiMe 3 ) 2 allowed exploiting the RT antimony telluride deposition, rather than a high-temperature pyrolysis-driven process; it is worth mentioning that the same set of precursors could be used in a hightemperature MOCVD: upon varying the temperature of the growth, within the 100−250 °C range, changes were induced on the granularity and overall morphology of the films (Figure S1, Supporting Information). 37 Nevertheless, the best quality was achieved via the RT MOCVD growth, followed by the substrate annealing and the post-growth annealing steps. Under the adopted RT experimental conditions, that consisted of SbCl 3 and Te(SiMe 3 ) 2 partial pressures set to 2.23 × 10 −4 and 3.25 × 10 −4 mbar, respectively, a total flow of 5.575 L min −1 , and a chamber pressure of 15 mbar, the process yielded, at a deposition time of 90 min, films in the thickness range from 29 to 35 nm, depending on the substrate of choice.…”

“…S1 of supplementary material). [27] Nevertheless, the best quality was achieved via room temperature MOCVD growth implementing the substrates annealing and the post-growth annealing steps.…”

“…Recently, taking advantage of the reactivity of SbCl3 (antimony chloride) and Te(SiMe3)2 (bis(trimethylsilyl)telluride), [1,27] their use as precursors in a room temperature MOCVD process to grow Sb2Te3 thin films on Si(111) has been proven. [28] In view of the integration of Sb2Te3-based components on electronic devices, it is pivotal studying their growth behaviour on substrates other than Si(111), and specifically on both crystalline and amorphous substrates, including oxides (for instance to allow back-gating).…”

“…32,34 Taking advantage of the reactivity of SbCl 3 (antimony chloride) and Te(SiMe 3 ) 2 (bis(trimethylsilyl)telluride), originally reported in the atomic layer deposition of tellurides, 15,23,24 their use as precursors in a room-temperature (RT) MOCVD to grow Sb 2 Te 3 thin films has been proven. 4,37,38 So far, the epitaxial growth of Sb 2 Te 3 has been demonstrated by molecular beam epitaxy on Si(111) and BaF 2 , 21,22,39 pulsed laser deposition on Si(111), 40 thermal evaporation on Al 2 O 3 (0001), 41 and MOCVD on Si(111) as well as on ZnTe buffer layers. 34,38,42 An efficient growth of topological insulators on crystalline silicon substrates, such as Si(111) or Si(100), would be attractive for their compatibility with the complementary metal-oxide semiconductor (CMOS) technology.…”

Weak Antilocalization in Granular Sb2Te3 Thin Films Deposited by MOCVD

“…Evidence and description of TI properties in such polycrystalline and granular systems is of dramatic importance, since it opens the way to the use of technologically‐appealing techniques for their fabrication . Among them, Metal Organic Chemical Vapor Deposition (MOCVD) can be efficiently exploited for the growth of chalcogenide conformal thin films and nanostructures on large areas . While the granularity‐controlled TI behavior of Bi 2 Te 3 films deposited by CVD has recently been described, there are no reports of similar studies on granular Sb 2 Te 3 films.…”