MOCVD of Niobium Nitrides and Oxy-Nitrides using an All-Nitrogen-Coordinated Precursor: Thin-film Deposition and Mechanistic Study

Abstract

In this study, niobium nitride and oxy-nitride thin films were grown by metalorganic chemical vapor deposition (MOCVD) from the guanidinate based niobium compound [Nb(N t Bu)(NMe 2 ){C(N i Pr) 2 (NMe 2 )} 2 ] that served either as a single source precursor (SSP) for NbN or as a niobium and nitrogen source for the growth of niobium oxy-nitride thin films in oxygen atmospheres. The decomposition of this SSP precursor was studied using NMR and mass spectrometry. From the mechanistic studies, it was evident that diisopropylcarbodiimide deinsertion takes place at elevated temperatures. Pure niobium nitride films were obtained without any additional source of nitrogen during the MOCVD process, whereas in the presence of oxygen mixed phases of NbN x , NbO x N y and Nb 2 O 5 were formed. The most relevant results are presented and discussed.

Engineered Tungsten Oxy-Nitride Thin Film Materials for Photocatalytical Water Splitting Fabricated by MOCVD

“…This is in good agreement with previous studies on MOCVD of nitrogen doped transition metal oxide films where nitrogen incorporation is reported to increase the onset temperature of crystallization. (22,23) As observed in Figure 2, the increase of deposition temperature above 600 °C results in a remarkable change in the crystallographic structure of the deposited films. At 700 °C the presence of both oxide and oxynitride phases was clearly identified, which provided the first proof for the validity of the precursor concept.…”