MOCVD of Platinum (100) Films on Random Hastelloy C276

Malandrino, Graziella; Nigro, Raffaella Lo; Fragalá, Ignazio L.

doi:10.1002/(sici)1521-3862(199903)5:2<59::aid-cvde59>3.0.co;2-q

Cited by 22 publications

(5 citation statements)

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“…Though widely studied, one major drawback of (C 5 H 4 Me)PtMe 3 as a CVD precursor is that it suffers from long nucleation delays. ,,,, This problem can be traced to the high metal–ligand bond strengths and consequent high kinetic barriers associated with eliminating ligands from adsorbed (C 5 H 4 Me)PtMe 3 molecules. , Such elimination reactions typically occur more quickly on platinum surfaces than they do on the underlying substrate, owing to the highly catalytic nature of platinum. ,, As a result, deposition initiates to form islands on the surface, which subsequently grow rapidly. Similar island growth behavior has been observed for several other Pt CVD precursors. ,− Eventually, the islands coalesce, but the long nucleation delays, and resulting sparse nucleation, mean that it is difficult to make continuous films that are also very thin; instead, at the point of full coalescence, the films are typically relatively thick and rough. Although the deposition of conformal Pt films has been achieved by means of an alternating ALD/oxygen plasma process from (C 5 H 4 Me)PtMe 3 , nucleation delays of ∼50 cycles are still observed …”

Section: Introductionsupporting

confidence: 63%

Platinum ω-Alkenyl Compounds as Chemical Vapor Deposition Precursors: Synthesis and Characterization of Pt[CH₂CMe₂CH₂CH═CH₂]₂ and the Impact of Ligand Design on the Deposition Process

et al. 2020

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We describe the synthesis and characterization of three platinum(II) ω-alkenyl complexes of stoichiometry Pt[CH2CMe2(CH2) x CHCH2]2 where x is 0, 1, or 2, as well as some related platinum(II) compounds formed as byproducts during their synthesis. The ω-alkenyl ligands in all three complexes, cis-bis(η1,η2-2,2-dimethylbut-3-en-1-yl)platinum (2), cis-bis(η1,η2-2,2-dimethylpent-4-en-1-yl)platinum (3), and cis-bis(η1,η2-2,2-dimethylhex-5-en-1-yl)platinum (4), bind to Pt by means of a Pt–alkyl sigma bond at one end of the ligand chain and a Pt–olefin pi interaction at the other; the olefins reversibly decomplex from the Pt centers in solution. The good volatility of 3 (10 mTorr at 20 °C), its ability to be stored for long periods without decomposition, and its stability toward air and moisture make it an attractive platinum chemical vapor deposition (CVD) precursor. CVD of thin films from 3 shows no nucleation delay on several different substrates (SiO2/Si, Al2O3, and VN) and gives films that are unusually smooth. At 330 °C in the absence of a reactive gas, the precursor deposits platinum containing 50% carbon, but in the presence of a remote oxygen plasma, the amount of carbon is reduced to below the Rutherford backscattering spectroscopy (RBS) detection limit without affecting the film smoothness. Under hot wall CVD conditions at 250 °C in the absence of a co-reactant, 72% of the carbon atoms in 3 are released as hydrogenated products (largely 4,4-dimethylpentenes), 22% are released as dehydrogenated products (all of which are the result of skeletal rearrangements), and 6% remain in the film. Some conclusions about the CVD mechanism are drawn from this product distribution.

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Section: Introductionsupporting

confidence: 63%

Platinum ω-Alkenyl Compounds as Chemical Vapor Deposition Precursors: Synthesis and Characterization of Pt[CH₂CMe₂CH₂CH═CH₂]₂ and the Impact of Ligand Design on the Deposition Process

et al. 2020

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“…Pt layer is reported to be deposited by MOCVD below 395 o C from the literature [18][19], the present data show the possibility of the preparation of fatigue-free FeRAM capacitor by all-MOCVD process below 400 o C.…”

Section: Pzt Films Deposited At 395 O Csupporting

confidence: 58%

Property Improvement of Mocvd-Pzt Films Deposited Below 400 °C

et al. 2003

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RuO 2 /(200-nm thick PZT)/RuO 2 capacitors were prepared by MOCVD. RuO 2 and PZT films were prepared at 350, and 395 and 445 o C from DER -O 2 and Pb(C 11 H 19 O 2 ) 2 -Zr(O･ t-C 4 H 9 ) 4 -Ti(O･i-C 3 H 7 ) 4 -O 2 systems, respectively. Clear hysteresis loops originated to ferroelectricity was observed for the PZT films deposited at 445 o C but was not at 395 o C. However, by the addition of 10-nm thick Pt layer prepared on the RuO 2 bottom electrode by e-beam evaporation, ferroelectricity above 30 µC/cm 2 in remanent polarization (P r ) was obtained for the PZT films deposited at 395 o C. This shows that the existence of Pt layer improved the crystallinity of PZT phase. This capacitor shows hardly fatigue up to 1 x 10 10 switching cycles, suggesting the fatigue free characteristics.

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“…43) We have shown that oxygen is effective to avoid carbon incorporation into the films prepared from Pt(acac) 2 ; platinum films of high-purity and an attractive epitaxial or oriented nature can be grown by an appropriate addition of oxygen. [19][20][21]44) Epitaxial platinum films on insulating substrates are of interest in device processing to achieve epitaxial growth of functional ceramic over-layers as well as in fundamental conductivity studies. Epitaxial platinum films grown by CVD effectively promoted the epitaxial growth of AlN over-layers.…”

Section: -Diketonate Platinum Complexesmentioning

confidence: 99%

Chemical Vapor Deposition of Iridium, Platinum, Rhodium and Palladium

2003

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This article reviews the progress in the chemical vapor deposition of iridium, platinum, rhodium and palladium metals. In the course of the last decade the number of articles on CVD of this group of metals has increased significantly. A wide variety of metal organic complexes have been investigated as potential precursors and appreciable results have been obtained. However, some aspects such as low deposition rates and impurity incorporation into the films still remain as concerns in this area. The representative results on CVD of these metals are presented according to the type of metal organic complexes used.

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MOCVD of Platinum (100) Films on Random Hastelloy C276

Abstract: Platinum metal films find applications in a wide range of technologies such as contacts in microelectronic devices, [1]

Cited by 22 publications

References 10 publications

Platinum ω-Alkenyl Compounds as Chemical Vapor Deposition Precursors: Synthesis and Characterization of Pt[CH₂CMe₂CH₂CH═CH₂]₂ and the Impact of Ligand Design on the Deposition Process

Platinum ω-Alkenyl Compounds as Chemical Vapor Deposition Precursors: Synthesis and Characterization of Pt[CH₂CMe₂CH₂CH═CH₂]₂ and the Impact of Ligand Design on the Deposition Process

Property Improvement of Mocvd-Pzt Films Deposited Below 400 °C

Chemical Vapor Deposition of Iridium, Platinum, Rhodium and Palladium

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MOCVD of Platinum (100) Films on Random Hastelloy C276

Abstract: Platinum metal films find applications in a wide range of technologies such as contacts in microelectronic devices, [1]

Cited by 22 publications

References 10 publications

Platinum ω-Alkenyl Compounds as Chemical Vapor Deposition Precursors: Synthesis and Characterization of Pt[CH2CMe2CH2CH═CH2]2 and the Impact of Ligand Design on the Deposition Process

Platinum ω-Alkenyl Compounds as Chemical Vapor Deposition Precursors: Synthesis and Characterization of Pt[CH2CMe2CH2CH═CH2]2 and the Impact of Ligand Design on the Deposition Process

Property Improvement of Mocvd-Pzt Films Deposited Below 400 °C

Chemical Vapor Deposition of Iridium, Platinum, Rhodium and Palladium

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Product

Resources

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Platinum ω-Alkenyl Compounds as Chemical Vapor Deposition Precursors: Synthesis and Characterization of Pt[CH₂CMe₂CH₂CH═CH₂]₂ and the Impact of Ligand Design on the Deposition Process

Platinum ω-Alkenyl Compounds as Chemical Vapor Deposition Precursors: Synthesis and Characterization of Pt[CH₂CMe₂CH₂CH═CH₂]₂ and the Impact of Ligand Design on the Deposition Process