Modal gain characteristics of GRIN-InGaAlAs/InP lasing nano-heterostructures

Alvi, P. A.; Lal, Pyare; Yadav, Rashmi; Dixit, Shobhna; Dalela, S.

doi:10.1016/j.spmi.2013.05.019

Cited by 16 publications

(2 citation statements)

References 28 publications

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“…For the three internal loss coefficients of 10, 15 and 20 cm −1 which cover the practical cases [1,22], a maximum appears in each curve at the bilayer number of 3.5, and the threshold gain decreases rapidly when the bilayer number larger than 3.5. The horizontal dash line in figure 7 indicates the threshold gain level of 1000 cm −1 , which can be realized by the InGaAlAs MQWs in experiments [22][23][24]. When the bilayer number is 5.5 and 6.5, the threshold gain is below the dash line for the three cases.…”

Section: Resultsmentioning

confidence: 94%

Mirror design for long-wavelength vertical-cavity surface-emitting lasers

Wang¹,

Cheng

Hu³

et al. 2017

Laser Phys. Lett.

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A kind of bottom mirror, fabricated using a nano-scale epitaxy method, is proposed for long-wavelength InP-based vertical-cavity surface-emitting lasers (VCSELs). The design of the bottom mirror combines the conventional dielectric distributed Bragg reflector structure with a fabrication procedure using nano-scale epitaxial lateral overgrowth (ELO). Hence, this ELO mirror structure can provide both a high reflectivity, to form an optical resonance cavity, and a virtual InP substrate for the growth of high quality active regions in the VCSEL. The dependence of the reflectivity on the epitaxial lateral overgrowth mirror structure parameters is analyzed in detail using numerical methods. The results demonstrate that a stopband at more than 99% reflectivity is achieved in the wavelength range from 1.49 to 2.09 µm, and the threshold optical gain can be as low as 202, 257, and 311 cm−1 for the internal loss coefficients of 10, 15 and 20 cm−1.

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Section: Resultsmentioning

confidence: 94%

Mirror design for long-wavelength vertical-cavity surface-emitting lasers

Wang¹,

Cheng

Hu³

et al. 2017

Laser Phys. Lett.

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show abstract

“…Recently, P. A. Alvi et al [4] have reported that type-I STIN and GRIN InGaAlAs/InP lasing heterostructures have high optical gain at 1.55 mm and 1.34 mm, respectively. In addition, for this structure, G-J characteristics along with the internal strain effects arising due to lattice mismatch have also been studied [5,6]. However, there is still a requirement to design the simple heterostructures for better and high optical gain generation in SWIR region by approaching a new band gap engineering.…”

Section: Introductionmentioning

confidence: 99%