Modal refractive index of 1.3 lµm InGaAsP, AlGaInAs and GaInNAs semiconductor lasers under high hydrostatic pressure

Jin, S. R.; Fehse, R.; Sweeney, S. J.; Knowles, G.; Adams, A.R.; O'Reilly, E. P.; Riechert, H.; Illek, S.; Egorov, A. Yu.; Thijs, P.J.A.; Uchida, T.; Fujii, T.

doi:10.1049/el:20020217

Cited by 4 publications

(3 citation statements)

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“…Furthermore, the measurements in [19] were preformed by spectroscopic ellipsometry of an unpumped surface layer, where as our measurements are performed on QWs electrically pumped close to threshold Jin et.al. have previously reported on the effective group index of InGaAsN lasers [20], obtaining a higher value of 3.65. It has been reported that refractive index increases with nitrogen content [19].…”

Section: Resultsmentioning

confidence: 91%

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Measurement of optical gain, effective group index and linewidth enhancement factor in 1.3 µm dilute nitride double-quantum-well lasers

et al. 2007

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The net modal gain, effective group index and linewidth enhancement factor in edge-emitting InGaAsN/GaAs lasers have been determined as a function of both temperature and injection current from experimental amplified spontaneous emission spectra. The shift of the peak gain with temperature was found to be 0.49nm/K. Values of effective group index between 3.52-3.59 were measured, suggesting a relatively high refractive index of 3.75 for the dilute nitride quantum well. Linewidth enhancement factor values between 1.87-2.84 were measured.

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Section: Resultsmentioning

confidence: 91%

“…It has been reported that refractive index increases with nitrogen content [19]. Therefore, the higher nitrogen content of 1.8% in the QW and the introduction of nitrogen into the barriers [21] could be the cause of the higher effective group index reported in [20].…”

Section: Resultsmentioning

confidence: 99%

Measurement of optical gain, effective group index and linewidth enhancement factor in 1.3 µm dilute nitride double-quantum-well lasers

et al. 2007

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“…The dominant effect of pressure and temperature on Γ occurs through the changes of λ; however, there is some small effect due to the refractive index contrast varying with pressure and temperature but it was shown to be negligible in Refs. [8] and [9]. In Refs.…”

Section: Tablementioning

confidence: 99%

Wide Range Wavelength Tuning of InGaAsP/InP Laser Diodes

2011

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We present results of theoretical studies of external tuning for laser diodes based on InGaAsP/InP heterostructures at temperatures from 300 K down to 80 K and at hydrostatic pressures up to 2.27 GPa. The tuning range achieved by pressure and grating was 390 nm (from 1220 nm to 1610 nm). At lower temperatures the tuning range achieved with grating was significantly reduced. Our results indicate that pressure tuning is much more effective than temperature tuning when combined with tuning by external grating.

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Wide range tuning of external cavity bent-waveguide laser diode

Dybała

Bajda

Bercha

et al. 2011

Journal of Applied Physics

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Bent-waveguide laser emitting around 1550 nm was tuned by external grating (in Littrow configuration) at temperatures from 300 K down to 80 K and at hydrostatic pressures up to 2.2 GPa. The tuning range achieved with grating was significantly reduced at lower temperatures. The tuning range achieved by pressure and grating was 390 nm (from 1220 to 1610 nm). In this range the emission power of the laser was above 30 mW with narrow emission line and the side-mode suppression ratio above 30 dB. Our results were interpreted by calculating the pressure and temperature dependence of gain spectra determined from a nonparabolic 8×8 kp model.

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Modal refractive index of 1.3 lµm InGaAsP, AlGaInAs and GaInNAs semiconductor lasers under high hydrostatic pressure

Cited by 4 publications

References 5 publications

Measurement of optical gain, effective group index and linewidth enhancement factor in 1.3 µm dilute nitride double-quantum-well lasers

Measurement of optical gain, effective group index and linewidth enhancement factor in 1.3 µm dilute nitride double-quantum-well lasers

Wide Range Wavelength Tuning of InGaAsP/InP Laser Diodes

Wide range tuning of external cavity bent-waveguide laser diode

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