Model for CMOS/SOI single-event vulnerability

Efficient modeling of single event transients directly in compact device models

“…Many approaches to modeling transient current pulses have been developed over the years [2][3][4][5]. A popular approach is to inject a double-exponential current pulse at the hit node, with the time constants and amplitude tailored to achieve a total integrated charge [6].…”

Effects of process parameter distributions and ion strike locations on SEU cross-section data (CMOS SRAMs)

“…Previous work has shown that the critical charge in SO1 cells is highly dependent on the action of a drain-source parasitic bipolar conduction effect [7,8]. This parasitic bipolar device amplifies the charge deposited by the single event in the body region of the OFF device, leading to an enhanced charge collection dependent on the current gain (p) of the parasitic device.…”

“…This model has been successfully used in the past to quantify critical charge values in Harris and TI SO1 processes [8].…”

Radiation Effects Test Chip Guidelines

“…because their insulating substrates preclude latchup, and their small charge collection vol-9.11.3 Special Design Considerations umes result in high upset thresholds for dose rate and SEU environments [90]. However, they Under normal conditions the two do exhibit some photoresponse, and this strucsides of the interdigitated structure are electri-ture is designed to determine the values to be cally isolated.…”

“…The pri-9.11 were designed to measure the photoconduc-mary photocurrent from the drain to the body tivity as a function of dose rate. In technologies can raise the body voltage with respect to the which use silicon dioxide as the substrate dielec-source (emitter) enough to forward bias it and tric (e.g., SIMOX), the electron current through produce secondary photocurrent [90]. The body the insulator can contribute a significant fraction tie to the source is provided to prevent the bodyof the total photoresponse.…”