Efficient modeling of single event transients directly in compact device models

Francis, A. Matthew; Turowski, Marek; Holmes, Jim; Mantooth, H. Alan

doi:10.1109/bmas.2007.4437528

Cited by 15 publications

(5 citation statements)

References 4 publications

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“…Piece-wise linear current sources can be used to better reproduce pulse and tail behavior observed in TCAD, but for only one transistor bias condition [6]. More recently, bias-dependent models have been developed which show great promise in producing results more consistent with TCAD and measurements [7], [8].…”

Section: Strike Kernel Modelsmentioning

confidence: 97%

“…This model is convenient in its ease of implementation in SPICE macromodels and its characterization and correspondence with, to some degree, the physics of injected charge. Above 180 nm and at low ion energies it produces both acceptable and predictable results, but has been shown to produce non-physical behaviors as processes continue to scale well past 100 nm [7]. Piece-wise linear current sources can be used to better reproduce pulse and tail behavior observed in TCAD, but for only one transistor bias condition [6].…”

Section: Strike Kernel Modelsmentioning

confidence: 98%

“…From all available data, a strike model is composed, which strives to represent the complex charge collection behaviors observed in a form suitable for SPICE simulation at a single circuit node. Typical models include the classic double-exponential [6], piece-wise-linear approximations [7] as well as bias-dependent models [8].…”

Section: Introductionmentioning

confidence: 99%

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Significance of Strike Model in Circuit-Level Prediction of Charge Sharing Upsets

Francis¹,

Dimitrov

Kauppila

et al. 2009

IEEE Trans. Nucl. Sci.

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When evaluating sub-100 nm circuits for hardness to Single Event Transients (SETs), the choice of strike model is shown to have a notable effect upon observed upsets. A method utilizing distributed charges to model strikes to adjacent devices is illustrated and utilized to compare the effect of strike kernel models in such Charge Sharing SETS (CSSETS). Bias-dependent models are shown to more accurately predict expected physical observations and Technology Computer Aided Design (TCAD) simulation, especially when such charge-sharing upsets must be considered.Index Terms-Charge sharing, radiation hardening by design (RHBD), radiation hardness assurance methodology, single event effects, single event transients (SETs).

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Section: Strike Kernel Modelsmentioning

confidence: 97%

Section: Strike Kernel Modelsmentioning

confidence: 98%

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Significance of Strike Model in Circuit-Level Prediction of Charge Sharing Upsets

Francis¹,

Dimitrov

Kauppila

et al. 2009

IEEE Trans. Nucl. Sci.

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“…The model can be used to perform SET simulations to reduce the overestimation of the critical charge. In addition, A. M. Francis et al [13] have proposed a calculation of current effects based on a piecewise linear current source (PWL) and an additional SPICE component. Messenger has proposed an expression resolution model for the transition shift function over time [14].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET

et al. 2023

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As the manufacturing process level of semiconductor devices continues to improve, the device size gradually decreases, and the devices are affected by the single event effect more and more severely. In this paper, the physical process of single particle incident N-channel Metal-Oxide-Semiconductor Field-Effect Transistor (NMOSFET) is simulated. By changing the particle incidence position, incidence angle, LET value, and temperature, the transient current variation with time is obtained, and the susceptibility of the device to single event effect under the action of four factors is analyzed, which provides the basis for the next research of the device against single event effect and ideas for the radiation hardening of semiconductor devices. In addition, in these experiments, there were bimodal-shaped current pulses that were different from single peak transient current pulses. Therefore, a new model describing the bimodal single event transient (SET) current waveform was proposed, which can be used as a current source model in circuit simulation and help to predict the ability of the circuit to resist the single event effect.

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“…Analytically, a mathematical model is deduced by Liu Zheng [11] with good consistence with TCAD simulation in peak value and pulse width, whereas this partially numeric fitting based technique can't predict the tail in charge collection. Diving deep into the SPICE compact model, Francis proposes a novel scheme to directly build the coupled current source into the BSIM4 model [12], maintaining good compatibility with the design flow, however requiring extra investigation into compact models. A applicable contribution is made by Liu Biwei [13] who developed the new look-up table (LUT) technique with only restrictions on simulator compatibility and complex programming.…”

Section: Introductionmentioning

confidence: 99%

Verilog-A based implementation for coupled model of single event transients in look-up table technique

Zhao

Zhang

2009

2009 IEEE 8th International Conference on ASIC

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A Verilog-A based implementation of voltage coupled model is developedfor Single-Event Transients (SETs) in microelectronic circuits. By implementing a look-up table in Verilog-A, the SET current source performs well and consents with the results from Technology CAD (TCAD) based mix-mode simulation. Simulation results from Synopsys Hspice 2008 indicates that the method proposed in this paper correctly reveals the current "tail" which reflects the equilibrium course of charge collection. Moreover, the Verilog-A based method speeds up the simulation by over 18,000 times than the mix-mode simulation and is also faster than the piecewise linear source (PWL).Furthermore, this Verilog-A based LUT method cooperates with the design flow well and can be easily applied to various applications with wide supports ofindustrial EDA tools}.

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Efficient modeling of single event transients directly in compact device models

Cited by 15 publications

References 4 publications

Significance of Strike Model in Circuit-Level Prediction of Charge Sharing Upsets

Significance of Strike Model in Circuit-Level Prediction of Charge Sharing Upsets

Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET

Verilog-A based implementation for coupled model of single event transients in look-up table technique

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