Model for Monte Carlo simulations of reflection electron energy loss spectra applied to Silicon at energies between 300 and 2000 eV

Pauly, Nicolas; Tougaard, S.

doi:10.1002/sia.3277

Cited by 6 publications

(4 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similar processes occur in REELS. MC simulation of REELS spectra of Si by Pauly‐Tougaard31 and Novak32 analyzed the physical processes including surface excitation. They achieved exact solution and very good simulation of the loss spectra.…”

Section: Resultsmentioning

confidence: 99%

Experimental determination of the electron elastic backscattering probability and the surface excitation parameter for Si, Ni, Cu and Ag at 0.5 and 1 keV energies

Gergely

Gurban

Menyhárd

et al. 2010

Surface & Interface Analysis

View full text Add to dashboard Cite

Electron spectra are generally presented in arbitrary units. The experimental elastic peak intensity I espec (E) is determined by the elastic backscattering probability I e (E) of electrons backscattered elastically within the solid angle of the spectrometer. The experimental elastic peak I espec (E) is converted to I e (E) backscattering probability using our new procedure based on the Goto i e (E) elastic backscattering current database. The elastic backscattering probability I c (E) was calculated applying the EPESWIN software of Jablonski. I e (E) < I c (E) due to the surface losses of electrons, characterized by the surface excitation parameter P se (SEP). P se (E) was determined experimentally using the Goto database and the relationship of Tanuma. Our new procedure is applied to angular-resolved (AREPES) spectra of Jablonski and Zemek presented in arbitrary units. In their AREPES experiments, the experimental elastic peak intensity I espec = I e (E, α d , ) was measured at α d angle of detection (35-74 • ) with a small HSA, with solid angle. The experimental value at 42• I e (E, 42 • , ) was converted to probability with the Goto database. It was corrected with a SEP parameter P se , determined by trial and error method for Si, Ni, Cu and Ag for E = 0.5 and 1 keV primary energies.

show abstract

Section: Resultsmentioning

confidence: 99%

Experimental determination of the electron elastic backscattering probability and the surface excitation parameter for Si, Ni, Cu and Ag at 0.5 and 1 keV energies

Gergely

Gurban

Menyhárd

et al. 2010

Surface & Interface Analysis

View full text Add to dashboard Cite

show abstract

“…For a given ELF, it can be used to calculate the IMFP as a function of energy. K and the IMFP can also be used as input data for Monte Carlo simulations 34 and as input for accurate determination of the structure and composition of nano‐structures with the QUASES software package (Quantitative Analysis of Surfaces by Electron Spectroscopy) 35 . In QUASES, the two‐ or three‐parameter universal inelastic scattering cross section developed by Tougaard 36 is generally used with good results; however, in some cases, it can be an advantage to use the specific cross section of a given material.…”

Section: Electrons Moving In a Homogeneous Isotropic Mediummentioning

confidence: 99%

QUEELS: Software to calculate the energy loss processes in TEELS, REELS, XPS and AES including effects of the core hole

Tougaard

Pauly

Yubero

2022

Surface & Interface Analysis

View full text Add to dashboard Cite

We present the user‐friendly and freely available software package QUEELS (QUantitative analysis of Electron Energy Losses at Surfaces) that allows to calculate effective inelastic scattering cross sections within the dielectric response description, for swift electrons travelling nearby surfaces in several environments. We briefly describe the underlying theoretical models and illustrate its use to evaluate the distribution of energy losses taking place in electron spectroscopies like transmission electron energy loss spectroscopy (TEELS), X‐ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and reflection electron energy loss spectroscopy (REELS), which are widely used for material analysis. This includes the intrinsic excitations due to the core hole in XPS and AES.

show abstract

“…The procedure outlined above was implemented and applied to experimental Mg, Al and Si REELS spectra taken from [7,34,35]. The two-layer model is used to take into account surface excitations.…”

Section: Diimfp and Dsep Extraction From Mg Al And Si Reels Spectramentioning

confidence: 99%

Differential inverse inelastic mean free path and differential surface excitation probability retrieval from electron energy loss spectra

Afanas'ev

Gryazev

Efremenko

et al. 2017

Vacuum

View full text Add to dashboard Cite

Quantitative interpretation of the electron spectroscopy data requires the information on differential inverse inelastic mean free paths (DIIMFP) and differential surface excitation probabilities (DSEP). In this paper, we test an algorithm of extracting DIIMFP and DSEP from reflected electron energy loss spectra (REELS) and photo-electron spectra (PES) in which the desired functions are parametrized on the base of linear respond theory. Unknown parameters are found by using the fitting procedure. To account for surface excitations, the investigated samples are considered as multi-layer systems. Simulations of REELS and PES are performed by making use of the partial intensity approach. The partial intensities for the reflection function and the photo-electron density flux are computed on the base of the invariant imbedding method. Extracted DIIMFPs and DSEPs are compared with those obtained by other authors. Finally, REELS and PES spectra for Be, Mg, Al, Si, Nb and W are computed using the retrieved DIIMFPs and DSEPs, and compared with the experimental spectra. All comparisons show good agreement.

show abstract

Model for Monte Carlo simulations of reflection electron energy loss spectra applied to Silicon at energies between 300 and 2000 eV

Cited by 6 publications

References 21 publications

Experimental determination of the electron elastic backscattering probability and the surface excitation parameter for Si, Ni, Cu and Ag at 0.5 and 1 keV energies

Experimental determination of the electron elastic backscattering probability and the surface excitation parameter for Si, Ni, Cu and Ag at 0.5 and 1 keV energies

QUEELS: Software to calculate the energy loss processes in TEELS, REELS, XPS and AES including effects of the core hole

Differential inverse inelastic mean free path and differential surface excitation probability retrieval from electron energy loss spectra

Contact Info

Product

Resources

About