Model of Schottky Barrier Hot-Electron-Mode Photodetection

Vickers, Virgil E.

doi:10.1364/ao.10.002190

Cited by 110 publications

(58 citation statements)

References 4 publications

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“…In 1973, Archer and Cohen (Archer & Cohen, 1973) proposed thinning the electrode to increase the emission probability. The enhancement of IPE in thin metal film was theoretically investigated by Vicker who introduce a moltiplicative factor to the Fowler's formula (Vickers, 1971). However the resulting electrode was so thin that it was semitransparent producing low metal absorbance.…”

Section: Device Efficiency and Ipe Theorymentioning

confidence: 99%

“…Assuming a thin metal film, a phenomenological, semiclassical, ballistic transport model for the effects of the scattering mechanisms resulting in a multiplicative factor for quantum efficiency was developed by Vickers (Vickers, 1971) and recently reviewed by Scales et al (Scales & Berini, 2010). According to this model the accumulated probability P E that the electrons will have sufficient normal kinetic energy to overcome potential barrier is given by:…”

Section: Ipe Enhancement In Thin Metal Filmsmentioning

confidence: 99%

See 1 more Smart Citation

Silicon Photodetectors Based on Internal Photoemission Effect: The Challenge of Detecting Near-Infrared Light

Casalino¹,

Sirleto²,

Iodice³

et al. 2012

Photodetectors

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Section: Device Efficiency and Ipe Theorymentioning

confidence: 99%

Section: Ipe Enhancement In Thin Metal Filmsmentioning

confidence: 99%

Silicon Photodetectors Based on Internal Photoemission Effect: The Challenge of Detecting Near-Infrared Light

Casalino¹,

Sirleto²,

Iodice³

et al. 2012

Photodetectors

View full text Add to dashboard Cite

“…Assuming a thin metal film, a phenomenological, semiclassical, ballistic transport model for the effects of the scattering mechanisms resulting in a multiplicative factor for quantum efficiency was developed by Vickers [17]. According to this model, the accumulated probability P E that the electrons will have sufficient normal kinetic energy to overcome the potential barrier is given by…”

Section: Internal Photoemission Theorymentioning

confidence: 99%

“…The efficiency of the RCE-PD is given by (5) [17] where A T is the total optical absorbance of the metal while F e , P E , and η c have been previously introduced. The cavity effect is taken into account in the calculation of the A T factor, which has been carried out by using a transfer matrix method (TMM) [24,25].…”

Section: Proposed Devicementioning

confidence: 99%

Microcavity Silicon Photodetectors at 1.55 μm

Casalino

Coppola

Gioffrè

et al. 2011

Advances in OptoElectronics

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The design, the realization, and the characterization of silicon resonant cavity enhanced (RCE) photodetectors, working at 1.55 μm, are reported. The photodetectors are constituted by a Fabry-Perot microcavity incorporating a Schottky diode. The working principle is based on the internal photoemission effect. We investigated two types of structures: top and back-illuminated. Concerning the top-illuminated photodetectors, a theoretical and numerical analysis has been provided and the device quantum efficiency has been calculated. Moreover, a comparison among three different photodetectors, having as Schottky metal: gold, silver, or copper, was proposed. Concerning the back-illuminated devices, two kinds of Cu/p-Si RCE photodetectors, having various bottom-mirror reflectivities, were realized and characterized. Device performances in terms of responsivity, free spectral range, and finesse were theoretically and experimentally calculated in order to prove an enhancement in efficiency due to the cavity effect. The back-illuminated device fabrication process is completely compatible with the standard silicon technology.

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“…Assuming a thin metal film, a phenomenological, semiclassical, ballistic transport model for the effects of the scattering mechanisms resulting in a multiplicative factor for quantum efficiency has been developed by Vickers [7]. According to this model the accumulated probability P e that the electrons will have sufficient normal kinetic energy to overcome potential barrier is given by: where d is the metal thickness and a L e the mean free path.…”

Section: Internal Photoemissionmentioning

confidence: 99%