Modeling and analysis for the effects of gamma irradiation on the DC and AC performance in InGaP/GaAs SHBTs

Zhang, Jincan; Xu, Kun; Wang, Jinchan; Liu, Min; Zhang, Liwen; Liu, Bo; Zhao, Qifeng

doi:10.1080/10420150.2019.1684916

Cited by 5 publications

(2 citation statements)

References 17 publications

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“…In addition, the VRs of the model parameters decrease after annealing, indicating a recovery of the defects in the BE junction compared to the post-irradiation state. However, this is different from the capacitance property of GaAs HBT under gamma irradiation in Reference [21], where further degradation was reported after annealing compared to the post-irradiation condition. In the compact model, the equations for the junction capacitances can be found in the Reference [28].…”

Section: Capacitance Characteristicscontrasting

confidence: 64%

“…Van Uffelen M et al studied the direct current (DC) characteristics of SiGe HBTs at gamma doses of up to 4 MGy using the SPICE model [19]. Zhang J C et al investigated the impact of gamma irradiation on the DC and alternating current (AC) characteristics of gallium arsenide (GaAs) and InP hetero-junction bipolar transistors with the VBIC and Keysight models [20][21][22]. Thus, the relevant literature mainly focuses on model parameter analysis of gamma irradiation for Si BJTs, GaAs HBTs, SiGe HBTs and InP HBTs, while lacking the model parameter analysis of proton irradiation.…”

Section: Introductionmentioning

confidence: 99%

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Model Parameters and Degradation Mechanism Analysis of Indium Phosphide Hetero-Junction Bipolar Transistors Exposed to Proton Irradiation

Zhao,

Wang,

Zhang

et al. 2024

Electronics

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The degradation properties of Indium phosphide hetero-junction bipolar transistors (InP HBTs) under proton irradiation are studied and modelled using a compact model for pre-irradiation, post-irradiation, and post-annealing. The variation rates of the model parameters, such as the base–emitter saturation current (ISE) and ideality factor in the ideal region (NE) in the forward Gummel characteristics, the zero-biased capacitance (Cje) and the grading factor (Mjer) in the BE junction capacitance, and the transit time parameter in the base region (Tfb), are analysed to delve into the degradation mechanism induced by proton irradiation. The displacement damage, induced by proton irradiation in the space charge region of the base–emitter junction and in the quasi-neutral bulk base region, is found to be responsible for the decrease in current gain and cut-off frequency. After annealing, the variation rates of the parameters decrease significantly compared to post-irradiation. This suggests that the recombination of unstable defects leads to a slight recovery in the degradation characteristics of InP HBTs after a period of annealing.

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Section: Capacitance Characteristicscontrasting

confidence: 64%