Modeling and simulation of cylindrical surrounding double-gate (CSDG) MOSFET with vacuum gate dielectric for improved hot-carrier reliability and RF performance

Verma, Jay Hind Kumar; Haldar, Subhasis; Gupta, Rajeev; Gupta, Mridula

doi:10.1007/s10825-016-0803-8

J Comput Electron

2016

DOI: 10.1007/s10825-016-0803-8

|View full text |Cite

Modeling and simulation of cylindrical surrounding double-gate (CSDG) MOSFET with vacuum gate dielectric for improved hot-carrier reliability and RF performance

Jay Hind Kumar Verma

Subhasis Haldar

Rajeev Gupta³

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2018

2022

Publication Types

Select...

Article6

Relationship

Self Cite0

Independent6

Authors

Journals

Cited by 12 publications

(2 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…By contrast, Han et al demonstrated successful integration of lateral quasi-vacuum channel field emission transistor (VFET) with MOSFET. Multiple experimental demonstrations − ,,− and simulation − studies are being presented for improved performance and provide design guidelines for lateral field emission air-channel transistors (ACT).…”

mentioning

confidence: 99%

Metal–Air Transistors: Semiconductor-Free Field-Emission Air-Channel Nanoelectronics

et al. 2018

View full text Add to dashboard Cite

Scattering-free transport in vacuum tubes has always been superior to solid-state transistors. It is the advanced fabrication with mass production capability at low cost which drove solid-state nanoelectronics. Here, we combine the best of vacuum tubes with advanced nanofabrication technology. We present nanoscale, metal-based, field emission air channel transistors. Comparative analysis of tungsten-, gold-, and platinum-based devices is presented. Devices are fabricated with electron beam lithography, achieving channel lengths less than 35 nm. With this small channel length, vacuum-like carrier transport is possible in air under room temperature and pressure. Source and drain electrodes have planar, symmetric, and sharp geometry. Because of this, devices operate in bidirection with voltages <2 V and current values in few tens of nanoamperes range. The experimental data shows that influential operation mechanism is Fowler–Nordheim tunnelling in tungsten and gold devices, while Schottky emission in platinum device. The presented work enables a technology where metal-based switchable nanoelectronics can be created on any dielectric surface with low energy requirements.

show abstract

mentioning

confidence: 99%

Metal–Air Transistors: Semiconductor-Free Field-Emission Air-Channel Nanoelectronics

et al. 2018

View full text Add to dashboard Cite

show abstract

“…1. Introduction Double-gate (DG) MOSFET is becoming a subject of intense research (Verma et al, 2016;Al Mahmud et al, 2017;Hong et al, 2017) because of the limit imposed on the scaling of the conventional bulk MOSFET by short-channel effects (SCEs). The reduction in SCEs is possible because of better electrostatic control in DG MOSFET.…”

mentioning

confidence: 99%

Modeling of electrical behavior of undoped symmetric Double-Gate (DG) MOSFET using carrier-based approach

Singh

2019

COMPEL

View full text Add to dashboard Cite

Purpose This study aims to develop a compact analytical models for undoped symmetric double-gate MOSFET based on carrier approach. Double-Gate (DG) MOSFET is a newly emerging device that can potentially further scale down CMOS technology owing to its excellent control of short channel effects, ideal subthreshold slope and free dopant-associated fluctuation effects. DG MOSFET is of two types: the symmetric DG MOSFET with two gates of identical work functions and asymmetric DG MOSFET with two gates of different work functions. To fully exploit the benefits of DG MOSFETs, the body of DG MOSFETs is usually undoped because the undoped body greatly reduces source and drain junction capacitances, which enhances the switching speed. Highly accurate and compact models, which are at the same time computationally efficient, are required for proper modeling of DG MOSFETs. Design/methodology/approach This paper presents a carrier-based approach to develop a compact analytical model for the channel potential, threshold voltage and drain current of a long channel undoped symmetric DG MOSFETs. The formulation starts from a solution of the 2-D Poisson’s equation in which mobile charge term has been included. The 2-D Poisson’s equation in rectangular coordinate system has been solved by splitting the total potential into long-channel (1-D Poisson’s equation) and short-channel components (remnant 2-D differential equation) in accordance to the device physics. The analytical model of the channel potential has been derived using Boltzmann’s statistics and carrier-based approach. Findings It is shown that the metal gate suppresses the center potential more than the poly gate. The threshold voltage increases with increasing metal work function. The results of the proposed models have been validated against the Technology Computer Aided Design simulation results with close agreement. Originality/value Compact Analytical models for undoped symmetric double gate MOSFETs.

show abstract

The analog/RF performance of a strained-Si graded-channel dual-material double-gate MOSFET with interface charges

Suddapalli

Nistala

2020

J Comput Electron

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Modeling and simulation of cylindrical surrounding double-gate (CSDG) MOSFET with vacuum gate dielectric for improved hot-carrier reliability and RF performance

Cited by 12 publications

References 23 publications

Metal–Air Transistors: Semiconductor-Free Field-Emission Air-Channel Nanoelectronics

Metal–Air Transistors: Semiconductor-Free Field-Emission Air-Channel Nanoelectronics

Modeling of electrical behavior of undoped symmetric Double-Gate (DG) MOSFET using carrier-based approach

The analog/RF performance of a strained-Si graded-channel dual-material double-gate MOSFET with interface charges

Contact Info

Product

Resources

About