Modeling and simulation of ionizing radiation effect on ferroelectric field-effect transistor

Yan, Shaoan; Li, Gang; Guo, Hao; Zhao, Wei; Xiong, Ying; Tang, Minghua; Zheng, Li; Xiao, Yongguang; Zhang, Wanli; Lei, Zhifeng

doi:10.7567/jjap.55.048001

Cited by 4 publications

(5 citation statements)

References 14 publications

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“…where N d is the doping concentration, g si is the carrier generation rate conversion factor [carrier = (m 3 •rad)] in the silicon substrate, D is the incident dose rate (rad/s), τ is the lifetime of minority carriers before radiation, and τ r is the lifetime of minority carriers after radiation. The one-dimensional continuity equation for uniform ionizing radiation-induced charges for the valence band hole concentration in the ferroelectric and insulator layers can be written as [28] ∆N f e = (1/d f e )…”

Section: Physical Modelmentioning

confidence: 99%

Modeling of Ionizing Radiation Effects for Negative Capacitance Field-Effect Transistors

Xiao

Cao

et al. 2023

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A theoretical model for simulating ionizing radiation effects on negative capacitance field-effect transistors (NCFETs) with a metal–ferroelectric–insulator–semiconductor (MFIS) structure was established. Based on the model, the effects of total ionizing dose (TID) and dose rate on the surface potential, ferroelectric capacitance, voltage amplification factor, and transfer characteristics of NCFETs were investigated. The simulation results demonstrated that, with the increase in total dose, the curves of surface potential versus gate voltage and driving current versus gate voltage shift left significantly, resulting in the point of voltage amplification shifting left. Meanwhile, with the increase in dose rate, the amplitude of both the surface potential and driving current decreases slightly. Meanwhile, the derived result indicated that relatively thin ferroelectric thickness can effectively reduce the effect of TID. It is expected that this model can be helpful for analyzing the radiation effects of NCFETs.

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Section: Physical Modelmentioning

confidence: 99%

Modeling of Ionizing Radiation Effects for Negative Capacitance Field-Effect Transistors

Xiao

Cao

et al. 2023

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“…It was concluded that remanent polarization decreases due to radiation-induced vacancies and lattice distortion. Previously, Yan et al developed a theoretical model to analyze the electrical characteristics of a p-channel MFIS structure, concluding that the device is strongly affected by incident radiation of 200 krad/s that can potentially compromise its reliability [10]. However, none of these works accounted for TID impact on the memory states.…”

Section: Related Workmentioning

confidence: 99%

Modeling and Investigating Total Ionizing Dose Impact on FeFET

Sayed,

Ni,

Amrouch

2023

IEEE J. Explor. Solid-State Comput. Devices Circuits

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This paper presents a novel, simulation-based study of the long-term impact of X-ray irradiation on the ferroelectric field effect transistor (FeFET). The analysis is conducted through accurate multi-physics technology CAD (TCAD) simulations and radiation impact on the two FeFET memory states-HVT and LVT-is studied. For both the states, we investigate the deterioration of device characteristics, such as threshold voltage shift (∆V th ) and memory window (MW) degradation, resulting from total ionizing dose (TID) exposure between 10 krad/s to 3 Mrad/s. At a dose rate of 10 krad/s, the FeFET is adequately radiation hardened for both HVT and LVT due to negligible change in MW from the baseline, unradiated case. At a dose rate of 3 Mad/s, a MW degradation of 40% is observed, and the greatest contributor is identified as the HVT state, which shows a 0.5 V increase in ∆V th , compared to 0.08 V ∆V th for LVT at the same dose rate. The difference in radiation responses for HVT and LVT at the same TID is investigated and attributed to the impact of the depolarization electric field (E dep ) on the transport of electrons and holes. Consequently, holes form oxide traps that occupy deeper energy levels for HVT compared to LVT, which underlies the V th shift and MW degradation. The resultant Id-Vg characteristics are in good agreement with experimental data. Our analysis highlights that the HVT state is sensitive to TID relative to LVT.

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“…25−28 voltage (V TH ) shift and memory window (MW) degradation. 25,28 In 2019, Chen et al first reported the TID effect on memory characteristics of Hf 0.5 Zr 0.5 O 2 (HZO)-based FeFETs. 29 They found that the MW of HZO-based FeFETs did not degrade for the dose to 1 Mrad(Si), but the program/erase (P/ E) cycling properties (i.e., endurance properties) showed nonnegligible degradation owing to the radiation.…”

Section: Introductionmentioning

confidence: 99%

“…As a result, ferroelectric memory technologies have attracted great interest due to the reported radiation tolerance of ferroelectric materials. Due to the aforementioned challenges in FeFETs integrated with traditional ferroelectric materials, previous research mainly focused on the radiation effects on ferroelectric thin films. − Only a few works have been devoted to studying the impact of radiation on FeFET device characteristics. − Yan et al investigated the TID effects in FeFETs integrated with SrBi 2 Ta 2 O 9 thin films and found that the TID radiation would cause severe threshold voltage ( V TH ) shift and memory window (MW) degradation. , In 2019, Chen et al first reported the TID effect on memory characteristics of Hf 0.5 Zr 0.5 O 2 (HZO)-based FeFETs . They found that the MW of HZO-based FeFETs did not degrade for the dose to 1 Mrad(Si), but the program/erase (P/E) cycling properties (i.e., endurance properties) showed non-negligible degradation owing to the radiation.…”

Section: Introductionmentioning

confidence: 99%

Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO₂-Based Ferroelectric Field-Effect Transistors

Dai

Yang

Zeng

et al. 2022

ACS Appl. Mater. Interfaces

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The ferroelectric field-effect transistors (FeFETs) with HfO 2 -based ferroelectric layers in the gate stacks are emerging as one of the most promising candidates for the next-generation nonvolatile memory devices due to their scalability and compatibility with conventional Si technology. Moreover, owing to the high radiation hardness of the HfO 2 -based ferroelectric thin films, HfO 2 -based FeFETs have attracted great interest in the fields of radiation-hard (rad-hard) memory. However, the reliability of their memory states under irradiation, which represents the validity of the stored information, has not been investigated. Here, we focus on the impact of the total ionizing dose (TID) on erased and programmed states of HfO 2 -based FeFETs. The TID radiation (Xray) characteristics of erased and programmed HfO 2 -based FeFETs are characterized using an on-site read operation. Both the erased and programmed states show robust stability under irradiation at a dose rate of 90 rad(Si)/s, and even at 230 rad(Si)/s, only the erased state shows a slight variation. The possible factors contributing to memory state degradation are discussed. Through the analysis of the threshold voltage shift and subthreshold swing evolution, as well as studies of ferroelectric polarization stability under radiation, it is revealed that the erased state degradation is caused by oxidetrapped charges rather than interface degradation or polarization switching. The physical mechanism of the difference in radiationinduced oxide-trapped charges buildup in programmed and erased FeFETs is analyzed to explain different TID radiation characteristics between them. Our work suggests that the HfO 2 -based FeFETs have great potential in radiation environment applications.

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Modeling and simulation of ionizing radiation effect on ferroelectric field-effect transistor

Cited by 4 publications

References 14 publications

Modeling of Ionizing Radiation Effects for Negative Capacitance Field-Effect Transistors

Modeling of Ionizing Radiation Effects for Negative Capacitance Field-Effect Transistors

Modeling and Investigating Total Ionizing Dose Impact on FeFET

Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO₂-Based Ferroelectric Field-Effect Transistors

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Modeling and simulation of ionizing radiation effect on ferroelectric field-effect transistor

Cited by 4 publications

References 14 publications

Modeling of Ionizing Radiation Effects for Negative Capacitance Field-Effect Transistors

Modeling of Ionizing Radiation Effects for Negative Capacitance Field-Effect Transistors

Modeling and Investigating Total Ionizing Dose Impact on FeFET

Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO2-Based Ferroelectric Field-Effect Transistors

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Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO₂-Based Ferroelectric Field-Effect Transistors