2015
DOI: 10.1109/ted.2015.2437954
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Modeling Channel Thermal Noise and Induced Gate Noise in Junctionless FETs

Abstract: This paper presents analytical expressions for channel noise, induced gate noise (IGN), and cross-correlation noise in a long-channel junctionless (JL) double-gate MOSFET. The analytical relationships, which have been derived from a coherent charge-based model, are validated with technology computer-aided design simulations, and the figures of merit have been compared with the inversion mode FETs. For a given current, we found that the channel thermal noise is very similar for both architectures, whereas the I… Show more

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Cited by 11 publications
(3 citation statements)
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References 24 publications
(31 reference statements)
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“…The model is derived without the need to develop a new set of analytical relationships and is found to be valid in all the regions of operation, from deep depletion to flatband and from linear to saturation, as confirmed by extensive comparison with TCAD numerical simulations. In addition, this equivalence should also hold for ac analysis [16], asymmetric operation [17], noise [18], and short channel effects, as developed for JLFETs.…”
Section: Discussionmentioning
confidence: 98%
“…The model is derived without the need to develop a new set of analytical relationships and is found to be valid in all the regions of operation, from deep depletion to flatband and from linear to saturation, as confirmed by extensive comparison with TCAD numerical simulations. In addition, this equivalence should also hold for ac analysis [16], asymmetric operation [17], noise [18], and short channel effects, as developed for JLFETs.…”
Section: Discussionmentioning
confidence: 98%
“…The equivalent input gate voltage noise is considered as the mathematical construction which is derived from the drain current noise. The relation between S id and S vg can be expressed as [36,37], The same decreases as V GS rises owing to higher transconductance at larger V GS . At moderate frequency of 1 MHz, S vg with traps remains constant, whereas the S vg without trap is first increasing in subthreshold range thereafter it decreases as depicted in figure 7(b).…”
Section: Input Referred Gate Voltage Noise Spectral Density (S Vg )mentioning
confidence: 99%
“…As the gate of the other FET is tied to ground, it acts as a differential-mode input voltage. This noise contribution is related to a noise source of field effect transistors named "induced gate noise" (IGN) 23 . This noise type has been found early and been linked to noise of the drain current, such as shot noise, leading to a modulation of the channel potential, which couples capacitively to the gate 24,25 .…”
Section: Noise Considerationsmentioning
confidence: 99%