Modeling gate-all-around Si/SiGe MOSFETs and circuits for digital applications

Kumar, Somesh; Kumari, Amrita; Das, Mausumi

doi:10.1007/s10825-016-0941-z

Cited by 13 publications

(7 citation statements)

References 49 publications

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“…For the mathematical model, the explicit model is compared with the implicit model proposed by [21]. Meanwhile, to validate the strain parameters and physical assumption used in our proposed work, the model is compared with the TCAD simulator, experimental [9] and the published data [7].…”

Section: Current-voltage (I-v) Model With Quantum Effectmentioning

confidence: 99%

“…However, extreme scaling on these dimensions deteriorates the device performances due to inevitable quantum mechanical (QM) effects [4][5][6]. In addition, the quantum effects degrade the carrier velocity of unstrained SG MOSFET [7]. This degradation can also contribute to mobility reduction for the short channel device.…”

Section: Introductionmentioning

confidence: 99%

“…From the existing simulation works, the device based on heterostructures and elliptical structures were characterized [21,22]. Besides, in the physical models, most of the works used an analytical approach which must be solved numerically and was not suitable for circuit simulator [7,20]. Other than that, to integrate the analytical model to a circuit simulator requires an additional step before it could be used in the circuit simulator which makes the process even more complicated [7].…”

Section: Introductionmentioning

confidence: 99%

“…Besides, in the physical models, most of the works used an analytical approach which must be solved numerically and was not suitable for circuit simulator [7,20]. Other than that, to integrate the analytical model to a circuit simulator requires an additional step before it could be used in the circuit simulator which makes the process even more complicated [7]. Another consequence contributed by the numerical method is the convergence issue which requires a longer time to solve thus making the calculation very slow.…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, several attempts have been initiated to model the device with the incorporation of quantum effect which applies for both intrinsic and unstrained devices [5,24,25]. However, the characterisation of strained SG MOSFET with the inclusion of QM effect through a charge-based compact model is yet to be unveiled [7,[19][20][21][22]. Prior to the advantages of the compact model and limitation works of strained silicon SG MOSFET based on charge solution, there is a need to develop a compact model with the quantum effect which is able to characterise the strain effect in a shorter time and with fewer convergence iteration issues.…”

Section: Introductionmentioning

confidence: 99%

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Modeling of inversion and centroid charges of long channel strained-silicon surrounding gate MOSFETs incorporating quantum effects

Hamid

Johari

Alias

et al. 2020

Semicond. Sci. Technol.

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This paper presents a modeling approach for strained silicon surrounding gate MOSFETs. The main contribution of this work is the simplification of the charge model by using an explicit solution technique which includes the strained and quantum effects. Quantum effects are essential due to extreme scaling of radius and oxide thickness. These can be solved by integrating the quantum capacitance and threshold in the proposed model. The gate capacitance is formulated based on a centroid charge that can be applied for multiple doping levels and structural dimensions. Meanwhile, the quantum effect on the channel due to carrier confinement can be approximated based on the radius of the channel. For the simulator, the Bohm Quantum Model (BQP) is used to facilitate the quantum effect. Our explicit model is in good agreement with the numerical simulator, for various gate voltages, doping concentration and structural effects, based on the centroid and inversion charge. It is found that the doping level can contribute to the changes in the centroid charge position from the silicon-oxide interface to the center of the channel. In addition, the tensile strain shows a significant impact on the electrical properties of the strained silicon surrounding gate such as threshold voltage, inversion charge, and current. This technique holds the potential for implementation is owing to advantages such as fast data computing which can be directly integrated into the circuit simulator.

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Section: Current-voltage (I-v) Model With Quantum Effectmentioning

confidence: 99%