Modeling hot carrier damage interaction between on and off modes for 28 nm AC RF applications

Device Reliability to Circuit Qualification: Insights and Challenges

“…Low frequency (LF) with F= 0.1Hz and high frequency (HF) with F= 100KHz AC stressing have been compared in Fig. 8 to pure DC MP (10 4 s) and to alternated phases using DC MP to Off-state measurements using 10 3 s quasi-static sequences [12]. AC pulse trains are composed of successive "On" and "Off" mode stress with two kinds of sequences, either ending with "On mode" stage or else ending by "Off mode" stage.…”

“…In this paper, the main contribution of aging phenomena is studied in section II in different CMOS nodes coming from LP 28nm FDSOI (HKMG gate stack) and smart power extended drain (EDMOS with SiO2 gate oxide). We restricted the work here to HCD, BTI mechanisms which may trigger HBD in some configurations [12]. Drain current reduction (∆IDS) is described by VTh shift (∆VTh), mobility reduction (∆µeff) and source-drain resistance increase (∆RSD) whereas each contribution depends on the leading damage mechanism (defect density and spread) and on drain to channel architecture.…”

“…Drain current reduction (∆IDS) is described by VTh shift (∆VTh), mobility reduction (∆µeff) and source-drain resistance increase (∆RSD) whereas each contribution depends on the leading damage mechanism (defect density and spread) and on drain to channel architecture. Section III deals with the challenge of device modelling considering the sense effects and temperature impacts [10] through interacting damage mechanisms in switched transistors between Off-mode and Onmode when channel carriers from different energy ranges are involved [12]. The last part (Section IV) gives insights in digital to analog circuits for a realistic reliability determination using HTOL in Ring Oscillators (RO), SRAM cell, Low Drop-Out regulator (LDO) and ADC circuit that illustrate the product reliability qualification.…”

New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes

“…HCD in On-state was carried out using pre-stress step following On-state TDDB tests showing neither reduction nor acceleration of TBD [12]. However, we observed recently that pre-stress HCD under multiple particle mechanism (MP) can lead to TBD reduction under Off mode TDDB compared to fresh TDDB [1,2].…”