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We present a detailed analysis of Off-state Time Dependent Dielectric Breakdown (TDDB) under non-uniform field performed in MOSFET devices from 28nm FDSOI, 65nm SOI to 130nm nodes. Oxide breakdown in thin gate oxide is characterized under DC stress with different gate-length LG and as function of drain voltage VDS and temperature. We show that the leakage current is a better monitor for TDDB dependence under Off-mode stress whereas a new modeling is proposed. It is found that Weibull slopes β are higher in PFET due large amount of injected hot electrons than in NFET when hot holes are involved.