New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes

Abstract

We present a detailed analysis of Off-state Time Dependent Dielectric Breakdown (TDDB) under non-uniform field performed in MOSFET devices from 28nm FDSOI, 65nm SOI to 130nm nodes. Oxide breakdown in thin gate oxide is characterized under DC stress with different gate-length LG and as function of drain voltage VDS and temperature. We show that the leakage current is a better monitor for TDDB dependence under Off-mode stress whereas a new modeling is proposed. It is found that Weibull slopes β are higher in PFET due large amount of injected hot electrons than in NFET when hot holes are involved.

Device Reliability to Circuit Qualification: Insights and Challenges

“…In this case the damage doesn't exceed 10%, which might be related to ≡Si─O bonds excitation and breaking due to hole trapping. Thin gate oxide breakdown is characterized under DC Off-state TDDB stress with different gate-length LG and as a function of drain voltage VDS and temperature [31]. Even without inversion layer build-up, the carriers can be injected from drain edge by impact ionization and favored by gate-induced drain leakage (GIDL) and band-to-band tunneling (BTBT) combination, which may create defects at the interface and into the volume gate-oxide until triggering dielectric HBD.…”

Experimental Study on Critical Parameters Degradation of Nano PDSOI MOSFET under TDDB Stress

“…Compared with bulk silicon devices, due to their advantages of full medium isolation and high-temperature resistance, SOI devices are widely used in [ 1 , 2 ]. With the shrinking size of the integrated circuit and the thinning gate oxide thickness of MOSFETs, time-dependent dielectric breakdown (TDDB) remains a key reliability concern in MOSFETs in recent years [ 3 , 4 , 5 ]. Many researchers focus on studying the TDDB lifetime of advanced devices and the mechanism of oxide damage [ 6 , 7 , 8 ].…”