Modeling of a Silicon-Carbide MOSFET With Focus on Internal Stray Capacitances and Inductances, and Its Verification

Mukunoki, Yasushige; Nakamura, Yukihiko; Konno, Kentaro; Horiguchi, T.; Nakayama, Yasushi; Nishizawa, Akinori; Kuzumoto, Masaki; Akagi, Hirofumi

doi:10.1109/tia.2018.2796587

Cited by 37 publications

(3 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The

vs. drain voltage characteristics are shown in Figure 3 . The

significantly affects the dynamic behavior of SiC MOSFETs due to the well-known Miller effect [ 11 , 12 ]. The

of a SiC planar MOSFET consists of the gate oxide capacitance on the top of the JFET region and the depletion capacitance of the JFET region and drift layer [ 13 ].…”

Section: Resultsmentioning

confidence: 99%

A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching

et al. 2022

View full text Add to dashboard Cite

A new cell topology named the dodecagonal (a polygon with twelve sides, short for Dod) cell is proposed to optimize the gate-to-drain capacitance (Cgd) and reduce the specific ON-resistance (Ron,sp) of 4H-SiC planar power MOSFETs. The Dod and the octagonal (Oct) cells are used in the layout design of the 650 V SiC MOSFETs in this work. The experimental results confirm that the Dod-cell MOSFET achieves a 2.2× lower Ron,sp, 2.1× smaller high-frequency figure of merit (HF-FOM), higher turn on/off dv/dt, and 29% less switching loss than the fabricated Oct-cell MOSFET. The results demonstrate that the Dod cell is an attractive candidate for high-frequency power applications.

show abstract

“…The

vs. drain voltage characteristics are shown in Figure 3 . The

significantly affects the dynamic behavior of SiC MOSFETs due to the well-known Miller effect [ 11 , 12 ]. The

of a SiC planar MOSFET consists of the gate oxide capacitance on the top of the JFET region and the depletion capacitance of the JFET region and drift layer [ 13 ].…”

Section: Resultsmentioning

confidence: 99%

A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching

et al. 2022

View full text Add to dashboard Cite

show abstract

“…Mukunoki et al in [17], presented the analytical model and showed the dependence of V GS over gate and drain capacitances as C GS and C GD . Most of the presented work focuses on improving the model I-V characteristics.…”

Section: Introductionmentioning

confidence: 99%

Parameter extraction and selection for a scalable N-type SiC MOSFETs model and characteristic verification along with conventional dc-dc buck converter integration

et al. 2023

View full text Add to dashboard Cite

Most silicon carbide (SiC) MOSFET models are application-specific. These are already defined by the manufacturers and their parameters are mostly partially accessible due to restrictions. The desired characteristic of any SiC model becomes highly important if an individual wants to visualize the impact of changing intrinsic parameters as well. Also, it requires a model prior knowledge to vary these parameters accordingly. This paper proposes the parameter extraction and its selection for Silicon Carbide (SiC) power N-MOSFET model in a unique way. The extracted parameters are verified through practical implementation with a small-scale high power DC-DC 5 to 2.5 output voltage buck converter using both hardware and software emphasis. The parameters extracted using the proposed method are also tested to verify the static and dynamic characteristics of SiC MOSFET. These parameters include intrinsic, junction and overlapping capacitance. The parameters thus extracted for the SiC MOSFET are analyzed by device performance. This includes input, output transfer characteristics and transient delays under different temperature conditions and loading capabilities. The simulation and experimental results show that the parameters are highly accurate. With its development, researchers will be able to simulate and test any change in intrinsic parameters along with circuit emphasis.

show abstract

“…The broadband measurements of parasitics in multichip power modules lead to extraction of simplified equivalent circuits used for modeling the package EM behavior [1][2][3], frequently neglecting mutual inductive and capacitive coupling effects. The equivalent electrical circuits of discrete packages can be extracted based on impedance measurements [4], S-parameter measurements [5] or Time Domain Reflectometry (TDR) [6]. Additionally, to achieve a good match between measurements and EM simulations, it is highly important to understand the measurement setup in terms of calibration, excitations ports and measurement accuracy in different frequency ranges [7].…”

Section: Introductionmentioning

confidence: 99%

Broadband Circuit-Oriented Electromagnetic Modeling for Power Electronics: 3-D PEEC Solver vs. RLCG-Solver

Kovacevic-Badstuebner

Romano

Antonini

et al. 2021

Energies

View full text Add to dashboard Cite

Broadband electromagnetic (EM) modeling increases in importance for virtual prototyping of advanced power electronics systems (PES), enabling a more accurate prediction of fast switching converter operation and its impact on energy conversion efficiency and EM interference. With the aim to predict and reduce an adverse impact of parasitics on the dynamic performance of fast switching power semiconductor devices, the circuit-oriented EM modeling based on the extraction of equivalent lumped R-L-C-G circuits is frequently selected over the Finite Element Method (FEM)-based EM modeling, mainly due to its lower computational complexity. With requirements for more accurate virtual prototyping of fast-switching PES, the modeling accuracy of the equivalent-RLCG-circuit-based EM modeling has to be re-evaluated. In the literature, the equivalent-RLCG-circuit-based EM techniques are frequently misinterpreted as the quasi-static (QS) 3-D Partial Element Equivalent Circuit (PEEC) method, and the observed inaccuracies of modeling HF effects are attributed to the QS field assumption. This paper presents a comprehensive analysis on the differences between the QS 3-D PEEC-based and the equivalent-RLCG-circuit-based EM modeling for simulating the dynamics of fast switching power devices. Using two modeling examples of fast switching power MOSFETs, a 3-D PEEC solver developed in-house and the well-known equivalent-RLCG-circuit-based EM modeling tool, ANSYS Q3D, are compared to the full-wave 3-D FEM-based EM tool, ANSYS HFSS. It is shown that the QS 3-D PEEC method can model the fast switching transients more accurately than Q3D. Accordingly, the accuracy of equivalent-RLCG-circuit-based modeling approaches in the HF range is rather related to the approximations made on modeling electric-field induced effects than to the QS field assumption.

show abstract

Modeling of a Silicon-Carbide MOSFET With Focus on Internal Stray Capacitances and Inductances, and Its Verification

Cited by 37 publications

References 19 publications

A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching

A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching

Parameter extraction and selection for a scalable N-type SiC MOSFETs model and characteristic verification along with conventional dc-dc buck converter integration

Broadband Circuit-Oriented Electromagnetic Modeling for Power Electronics: 3-D PEEC Solver vs. RLCG-Solver

Contact Info

Product

Resources

About