Modeling of charge and discharge in scanning electron microscopy

Babin, S.; Borisov, S. S.; Ivanchikov, A.

doi:10.1117/12.828575

Cited by 7 publications

(4 citation statements)

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“…Primary and secondary electrons are traveling in this field, producing a signal on the SEM detector. 7,8 The interaction of primary electrons with the sample includes the elastic scattering with positive nuclei, binary inelastic collisions with core and valence electrons, and volume plasmon excitations. The secondary electrons are generated directly by the binary collisions and by the decay of plasmons.…”

Section: Monte Carlo Simulation Software With Pre-chargementioning

confidence: 99%

CD-SEM and e-beam defect inspection of high-aspect ratio contact holes: measurement and simulation of precharge

Babin

Borisov

Kwon³

et al. 2012

SPIE Proceedings

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The metrology and inspection of contact hole layers is an extremely complex task. At feature sizes below 45 nm, an aspect ratio higher than 1:10 is required. SEM metrology and electron beam defect inspection both face extreme difficulties due to the fact that the secondary electrons from the bottom of the contact holes are absorbed by the walls and do not reach the detector. In this paper, the pre-charging of a large area before taking images of the hole was explored. An understanding of the physics involved in contrast formation and optimization of the system setup may improve SEM imaging. Pre-charge and imaging were simulated using CHARIOT Monte Carlo software with varying pre-charge and observation conditions. It was found that at specific parameters in the e-beam setting, image contrast is sufficient for metrology and defect inspection. The simulations involved high aspect ratio contact holes without defects, as well as with two types of defects: the remaining under-etched layer at the bottom, and a particle defect at the bottom. The experimental results of the e-beam defect inspection and CD-SEM of the contact holes involving the flood beam are presented. The results of the simulation qualitatively agreed with the measured data.

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Section: Monte Carlo Simulation Software With Pre-chargementioning

confidence: 99%

CD-SEM and e-beam defect inspection of high-aspect ratio contact holes: measurement and simulation of precharge

Babin

Borisov

Kwon³

et al. 2012

SPIE Proceedings

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“…19 When the scanning electron microscope is used as a source of energetic electrons, the disccharged area is produced. Three-dimensional images produced by SEMs provide topographical, morphological, and compositional information, which makes it invaluable in a variety of science and industry applications.…”

Section: Methodsmentioning

confidence: 99%

Differential cross section for reflected electrons measured by electron mirror method

Al-zahy

2015

J. Nanophoton

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We derive an equation for the differential cross-section dσ∕dΩ of reflected electrons by using Electron Mirror method. The mathematical derivation of differential cross-section equation is based on the Rutherford scattering model as well as the equation of electric potential difference. We describe the interaction of focused electron beams with a polyethylene terephthalate sample using focused ion beam-scanning electron microscope electron mirror image. The electron differential cross-section dσ∕dΩ for different working distances h ¼ 33, 20, and 10 mm, with a scattering angle θ ranged from 10 deg to 55 deg, incident electrons energies η ¼ 500, 750, and 1000 eV, and scanning potential Δφ ranged from 1 to 2 kV has been calculated. According to our findings, the differential cross-section dσ∕dΩ of reflected electrons decreases with increasing scattering angle θ and the working distance h and is directly proportional to the difference potential Δφ and the energy of incident electrons η. Distort the electron mirror images with increased Δφ.

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“…This occurrence of charge and discharge has significance in application fields of micromachining, space environment, and so on. [12][13][14][15] Therefore, it is important to understand characteristics of combinational charge and discharge processes for reducing impacts of charging effects.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of charge and discharge of PMMA samples due to electron irradiation

Feng

Fang

et al. 2015

Chinese Phys. B

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Modeling of charge and discharge in scanning electron microscopy

Cited by 7 publications

References 0 publications

CD-SEM and e-beam defect inspection of high-aspect ratio contact holes: measurement and simulation of precharge

CD-SEM and e-beam defect inspection of high-aspect ratio contact holes: measurement and simulation of precharge

Differential cross section for reflected electrons measured by electron mirror method

Characteristics of charge and discharge of PMMA samples due to electron irradiation

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