Modeling of High-Voltage MOSFETs for Device/Circuit Optimization (Invited)

Abstract

Specific features of high-voltage MOSFETs and their modeling are summarized based on HiSIM-HV, which has been developed on the basis of HiSIM (Hiroshimauniversity STARC IGFET Model) for bulk MOSFETs A consistent potential description across MOSFET channel and high resistive drift region is the characteristic feature of the HiSIM models. The HiSIM-HV model covers symmetric and asymmetric device types up to several 100V switching capability with reproduction of accurate scaling properties of the devices. D-6-1 (Invited) pp. 730-731

Effect of Impact-Ionization-Generated Holes on the Breakdown Mechanism in LDMOS Devices

“…The generated holes influence the whole potential distribution within the device, and not only the drain terminal current but also source terminal current is increased. These mechanism are modeled successfully by the hole storage within the drift region as well as the channel region, and the model is implemented into HiSIM_HV, a circuit simulation model based on the complete surface-potential-based description [3,4,5]. Fig.…”