Modeling of Power GaN HEMT for Switching Circuits Applications Using Levenberg-Marquardt Algorithm

Bouchour, Al Mehdi; Dherbécourt, Pascal; Echeverri, Alex; Oualkadi, Ahmed El; Latry, Olivier

doi:10.1109/isaect.2018.8618845

Cited by 9 publications

(6 citation statements)

References 14 publications

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“…Threshold voltage V th , transconductance K p and transverse electrical field  were determined from output characteristics with a Levenberg-Marquardt Algorithm [9]. The stress induces an average decrease of 2% for V th on both generations, with highest values on Gen3L transistors.…”

Section: Results and Analysismentioning

confidence: 99%

“…The successive aging steps and the dynamic measurements are carried out by means of a dedicated switching bench described in reference [9]. Figure 4a. shows a view of this setup.…”

Section: Aging Tests With Switching Modementioning

confidence: 99%

“…This set of techniques is implemented in the GPM laboratory, for applications of microwave amplifiers and switching power transistors, the work is carried out in collaboration with academic and industrial partners from the aeronautics, automotive and renewable energy sectors [6], [7], [8], [9].…”

Section: Introductionmentioning

confidence: 99%

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New Technologies of Power Transistors for Efficiency Increase of Power Converters: The Reliability Consideration

Dherbécourt

Oualkadi

Joubert

et al. 2019

Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 20

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This paper proposes a methodology to study the reliability and failure analysis of new technologies of power transistors. The use of wide gap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN) is now a good alternative to meet the integration requirements of energy conversion systems. However, the reliability of these components is a crucial issue. Aging in operating conditions is considered, associated with electrical measurements to highlight nondestructive degradations of the performance of studied transistors. A step of looking for failure mechanisms in the material is made in order to identify any physical degradation. The information collected provide the user with valuable data and help to make an optimum choice of the component which can be integrated into the equipment. The presented work proposes the description of a methodology that meets these requirements and shows the study of two technologies of power transistors used in new generations of power converters.

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Section: Results and Analysismentioning

confidence: 99%

“…The successive aging steps and the dynamic measurements are carried out by means of a dedicated switching bench described in reference [9]. Figure 4a. shows a view of this setup.…”

Section: Aging Tests With Switching Modementioning

confidence: 99%

See 1 more Smart Citation

New Technologies of Power Transistors for Efficiency Increase of Power Converters: The Reliability Consideration

Dherbécourt

Oualkadi

Joubert

et al. 2019

Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 20

Self Cite

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“…The proposed drain current model of the DUT is a non-segmented, smooth and continuous equation inspired from the Motorola Electro-thermal Model (MET) developed by Curtice et al [25] and described in [26]. The proposed drain current equation is shown as follows:…”

Section: Modeling Temperature Dependencymentioning

confidence: 99%

Temperature Effects of GaN HEMTs on the Design of Power Converters

Bouchour

Dherbécourt

Latry³

et al. 2019

Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 20

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This paper proposes an experimental study of temperature effects on Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs). The output and transfer characteristics are monitored at temperatures ranging from 5°C to 105°C. The temperature dependency on static parameters of GaN HEMT is examined, such as: drain current (IDS), on-state resistance (RDS(ON)), transconductance (gm), threshold voltage (VTH) and the gate leakage current (IGSS). The decreases of IDS and gm accompanied with the increase of RDS(ON) and IGSS when increasing temperature have been observed. Moreover, the decrease in electron mobility with increasing temperatures is considered to be one of the causes of the reduction in the drain current and transconductance. In order to study the impact of temperature on power converters with GaN HEMTs by simulation approach, the thermal characteristics of a 650V, 30A GaN HEMT have been modelled. The used model is a nonsegmented Electro-thermal SPICE model of Motorola. The model parameters are extracted using Levenberg-Marquardt Algorithm.

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“…Even though some of the empirical parameters lack physical meaning, the models are accurate, fast, and applicable to different devices from the same class [21]. Behavioral modeling is a common modeling method that involves fitting mathematical equations to experimental data without knowledge of the physical mechanism of operation [19,[33][34][35][36][37]. The computational efficiency of behavioral models is their primary advantage [21,23].…”

Section: Introductionmentioning

confidence: 99%

Impact of parasitic elements on the power dissipation of Si superjunction MOSFETs, SiC MOSFETs, and GaN HEMTs

Joshi,

Pande,

Jadli

et al. 2023

Eng. Res. Express

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In power conversion systems, where higher switching frequencies are required for miniaturization, the selection of power switches with lower power loss becomes essential for achieving better efficiency. At higher switching frequencies, the parasitic elements of the power switch largely dictate the efficiency of the power electronic system. Hence, it becomes critical to investigate the impact of parasitic losses on overall efficiency. The parasitic components of the power transistor vary with the semiconductor technology and thus effects the power converter system differently. This paper compares three power switch technologies: Silicon (Si) based Superjunction (SJ) power MOSFET, Silicon Carbide (SiC) based power MOSFET, and Gallium Nitride (GaN) based HEMT, for three different voltage ratings: 650 V, 900 V, and 1200 V. The effect of the parasitic components on the converter efficiency has been demonstrated using an inductive clamped loading circuit implemented in LTSPICE. The results demonstrate that at a frequency of 200 kHz, the total power loss for 650 V power switches was 44 W, 108 W, and 127 W for GaN, SiC, and SJ, respectively. At 500 kHz, the total power loss for 1200 V power switches was 622 W and 720 W for GaN and SiC, respectively. Overall, the GaN technology provides lower power losses than SiC and SJ due to lower parasitic capacitance and on-resistance, indicating the potential of GaN power devices for higher voltage applications. This comparison enables a power engineer to select an appropriate power switch that ensures the best possible efficiency for a specific application.

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Modeling of Power GaN HEMT for Switching Circuits Applications Using Levenberg-Marquardt Algorithm

Cited by 9 publications

References 14 publications

New Technologies of Power Transistors for Efficiency Increase of Power Converters: The Reliability Consideration

New Technologies of Power Transistors for Efficiency Increase of Power Converters: The Reliability Consideration

Temperature Effects of GaN HEMTs on the Design of Power Converters

Impact of parasitic elements on the power dissipation of Si superjunction MOSFETs, SiC MOSFETs, and GaN HEMTs

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